Datasheet > SST12LP15B-QVCE-K

SST12LP15B-QVCE-K

更新时间： 2024-09-21 01:10:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		局域网 WLAN 无线局域网
页数	文件大小	规格书
28页	469K
描述
2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SST12LP15B-QVCE-K 数据手册

浏览型号SST12LP15B-QVCE-K的Datasheet PDF文件第2页

浏览型号SST12LP15B-QVCE-K的Datasheet PDF文件第3页

浏览型号SST12LP15B-QVCE-K的Datasheet PDF文件第4页

浏览型号SST12LP15B-QVCE-K的Datasheet PDF文件第5页

浏览型号SST12LP15B-QVCE-K的Datasheet PDF文件第6页

浏览型号SST12LP15B-QVCE-K的Datasheet PDF文件第7页

2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier

SST12LP15B

Data Sheet

SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/

GaAs HBT technology. Easily configured for high-linear operation meeting the

EVM requirements for 256 QAM applications, and for high-efficiency applications

with excellent power-added efficiency while operating over the 2.4- 2.5 GHz fre-

quency band. Configured for high efficiency, SST12LP15B will typically meet the

802.11g spectrum mask at 23 dBm with 270 mA. Configured for high linearity,

SST12LP15B will provide less than 2.5% EVM, up to 20 dBm, with MCS7-HT40

modulation, and less than 1.75% EVM, up to 18 dBm, with MCS9-VHT40 modula-

tion. This power amplifier also features easy board-level usage along with high-

speed power-up/down control through the reference voltage pins. The

SST12LP15B is offered in both a 3mm x 3mm, 16-contact VQFN package and a

2mm x 2mm, 12-contact XQFN package.

Features

• High Gain:

• High temperature stability

– More than 32 dB gain across 2.4–2.5 GHz over tempera-

ture -40°C to +85°C

– Typically 1 dB gain/power variation between 0°C to

+85°C

• Configured for High Linearity

• Excellent On-chip power detection

– 20 dBm at 2.5% DEVM, MCS7-HT40, 200mA

– 18 dBm at 1.8% DEVM, MCS9-VHT40, 180 mA

– 23 dBm typical spectrum mask compliance, MCS0-20

– 20 dB linear dynamic range

– Temperature- and VSWR-insensitive

• Simple input/output matching

• Packages available

• Configured for High Efficiency

– 23 dBm at 3% DEVM, 802.11g OFDM 54 Mbps, 310mA

– 25.5 dBm typical spectrum mask compliance, 802.11b,

1Mbps

– >29 dBm P1dB

– Meets 802.11g OFDM ACPR requirement up to 26 dBm

– 16-contact VQFN – 3mm x 3mm

– 12-contact XQFN – 2mm x 2mm

• All non-Pb (lead-free) devices are RoHS compliant

• High power-added efficiency/Low operating current

Applications

• WLAN (IEEE 802.11b/g/n/256 QAM)

• Low I_REFcurrent for power-up/down control

– I_REF<2 mA

• High-speed power-up/down

• Cordless phones

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay included

<200 ns

• 2.4 GHz ISM wireless equipment

• Low Shut-down Current:2µA

www.microchip.com

DS70005029C

07/15

12 3 4 5 6 7...28

中文翻译

下载PDF

与SST12LP15B-QVCE-K相关器件

型号	品牌	获取价格	描述	数据表
SST12LP15B-QXBE	MICROCHIP	获取价格	2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier
SST12LP15B-QXBE-K	MICROCHIP	获取价格	2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier
SST12LP15-QVC	SST	获取价格	2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15-QVCE	SST	获取价格	2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15-QVCE-K	SST	获取价格	2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP15-QVC-K	SST	获取价格	2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP17E	MICROCHIP	获取价格	2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E-QU8E	MICROCHIP	获取价格	SPECIALTY TELECOM CIRCUIT
SST12LP17E-QU8E-K	MICROCHIP	获取价格	2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E-XX8E	MICROCHIP	获取价格	SPECIALTY TELECOM CIRCUIT

与SST12LP15B-QVCE-K相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

34
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

31
SL74HC10N：高性能三输入与非门解析
2024-09-03

104
AIC1781A 电池充电控制器深度解析
2024-09-03

100

产品中心

服务支持

精选活动

关于我们

帮助中心

SST12LP15B-QVCE-K

SST12LP15B-QVCE-K 数据手册

与SST12LP15B-QVCE-K相关器件

与SST12LP15B-QVCE-K相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SST12LP15B-QVCE-K

SST12LP15B-QVCE-K 数据手册

与SST12LP15B-QVCE-K相关器件

与SST12LP15B-QVCE-K相关文章

您还可以找

您在本页遇到什么问题？