Datasheet > SST12LP19E

SST12LP19E

更新时间： 2024-09-20 12:01:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		放大器功率放大器
页数	文件大小	规格书
23页	391K
描述
2.4 GHz High-Power, High-Gain Power Amplifier

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SST12LP19E 数据手册

2.4 GHz High-Power, High-Gain Power Amplifier

SST12LP19E

Data Sheet

SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/

GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power,

high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n

applications. It typically provides 25 dB gain with 34% power-added efficiency.

SST12LP19E has excellent linearity while meeting 802.11g spectrum mask at 23.5

dBm and 802.11b spectrum mask at 23 dBm. This power amplifier includes a power

detector with dB-wise linear voltage output and features easy board-level usage

along with high-speed power-up/down control through a single combined reference

voltage pin. SST12LP19E and is offered in 6-contact XSON, 8-contact XSON, and

6-contact X2SON packages.

Features

• Excellent RF Stability with Moderate Gain:

• Low Shut-down Current (~2 µA)

– Typically 25 dB gain across 2.4 – 2.5 GHz

• High temperature stability

• High linear output power:

– ~1 dB gain/power variation between 0°C to +85°C

– >26 dBm P1dB

• Excellent On-chip power detection

- Please refer to “Absolute Maximum Stress Ratings” on

page 6

– 20 dB dynamic range on-chip power detection

– dB-wise linear output voltage

– Temperature stable and load insensitive

– Meets 802.11g OFDM ACPR requirement up to 23.5

dBm

– ~2.5% added EVM up to 18 dBm (high-efficiency con-

figuration) or ~3% added EVM up to 19.5 dBm (high-

power configuration) for 54 Mbps 802.11g signal

– Meets 802.11b ACPR requirement up to 23 dBm

• Simple input/output matching

• Packages available

– 8-contact XSON – 2mm x 2mm x 0.5 mm max

– 6-contact XSON – 1.5mm x 1.5mm x 0.5 mm max

– 6-contact X2SON – 1.5mm x 1.5mm x 0.4mm max

• High power-added efficiency/Low operating cur-

rent for 802.11b/g/n applications

– ~34%/200 mA @ P_OUT= 23.5 dBm for 802.11g

– ~31%/195 mA @ P_OUT= 23 dBm for 802.11b

• All non-Pb (lead-free) devices are RoHS compliant

• Single-pin low I_REFpower-up/down control

– I_REF<2 mA

Applications

• WLAN (IEEE 802.11b/g/n)

• Low idle current

– ~40-65 mA I_CQ, depending on package type and config-

uration.

• Home RF

• High-speed power-up/down

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay included

<200 ns

• Cordless phones

• 2.4 GHz ISM wireless equipment

www.microchip.com

DS70005041C

05/13

12 3 4 5 6 7...23

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与SST12LP19E相关器件

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SST12LP19E_14	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E-NR	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E-NR-K	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E-QX6E	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E-QX6E-K	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E-QX8E	MICROCHIP	获取价格	RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
SST12LP19E-QX8E-K	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP20	MICROCHIP	获取价格	2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12P1	CIT	获取价格	CIT SWITCH
SST12P2	CIT	获取价格	CIT SWITCH

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