Datasheet > SST12LP19E-NR-K

SST12LP19E-NR-K

更新时间： 2024-09-21 01:00:35

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
24页	438K
描述
2.4 GHz High-Gain, High-Efficiency Power Amplifier

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SST12LP19E-NR-K 数据手册

2.4 GHz High-Gain, High-Efficiency Power Amplifier

SST12LP19E

Data Sheet

SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/

GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power,

high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n

and 256 QAM applications. For WLAN applications, it typically provides 25 dB gain

with 34% power-added efficiency. SST12LP19E has excellent linearity while meet-

ing 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm.

This power amplifier includes a power detector with dB-wise linear voltage output

and features easy board-level usage along with high-speed power-up/down control

through a single combined reference voltage pin. SST12LP19E and is offered in 6-

contact XSON, 8-contact XSON, and 6-contact X2SON packages. Due to its small

package size and high efficiency, this power amplifier is also well suited for ZigBee^®

and Bluetooth^®applications.

Features

• Excellent RF Stability with Moderate Gain:

• Low Shut-down Current (~2 µA)

– Typically 25 dB gain across 2.4 – 2.5 GHz

• High temperature stability

• High linear output power:

– ~1 dB gain/power variation between 0°C to +85°C

– >26 dBm P1dB

• Excellent On-chip power detection

- Please refer to “Absolute Maximum Stress Ratings” on

page 6

– 20 dB dynamic range on-chip power detection

– Meets 802.11g OFDM ACPR requirement up to 23.5

dBm

– 3% EVM up to 18 dBm (high-efficiency configuration) or

~3% EVM up to 19.5 dBm (high-power configuration) for

54 Mbps 802.11g signal

– 2.5% EVM up to 16.5 dBm for MCS7–20 MHz band-

width

– 1.8% EVM up to 16 dBm for MCS9–40 MHz bandwidth

– Meets 802.11b ACPR requirement up to 23 dBm

– dB-wise linear output voltage

– Temperature stable and load insensitive

• Simple input/output matching

• Packages available

– 8-contact XSON – 2mm x 2mm x 0.5 mm max

– 6-contact XSON – 1.5mm x 1.5mm x 0.5 mm max

– 6-contact X2SON – 1.5mm x 1.5mm x 0.4mm max

• High power-added efficiency/Low operating cur-

rent for 802.11b/g/n applications

• All non-Pb (lead-free) devices are RoHS compliant

– ~34%/200 mA @ P_OUT= 23.5 dBm for 802.11g

– ~31%/195 mA @ P_OUT= 23 dBm for 802.11b

Applications

• WLAN (IEEE 802.11b/g/n/256 QAM)

• Single-pin low I_REFpower-up/down control

– I_REF<2 mA

• Low idle current

• Bluetooth

– ~40-65 mA I_CQ, depending on package type and config-

uration.

• ZigBee

• High-speed power-up/down

• Cordless phones

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay included

<200 ns

• 2.4 GHz ISM wireless equipment

www.microchip.com

DS70005041D

08/14

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与SST12LP19E-NR-K相关器件

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SST12LP19E-QX6E-K	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Power Amplifier
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SST12LP19E-QX8E-K	MICROCHIP	获取价格	2.4 GHz High-Gain, High-Efficiency Power Amplifier
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SST12P1	CIT	获取价格	CIT SWITCH
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SST12T1	CIT	获取价格	CIT SWITCH
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SST-1301-G-02-L	SAMTEC	获取价格	IC Socket, SIP13, 13 Contact(s)

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