Datasheet > SST12LP20

SST12LP20

更新时间： 2024-09-20 12:27:15

品牌	Logo	应用领域
美国微芯 - MICROCHIP		放大器功率放大器
页数	文件大小	规格书
13页	176K
描述
2.4 GHz High-Efficiency, High-Gain Power Amplifier

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SST12LP20 数据手册

2.4 GHz High-Efficiency, High-Gain Power Amplifier

SST12LP20

Data Sheet

SST12LP20 is a RF-matched power amplifier module based on the highly-reliable

InGaP/GaAs HBT technology. This amplifier includes DC blocks and provides both

input and output match to 50Ω. Operating over the 2.4–2.5 GHz frequency band, the

amplifier typically provides 30 dB gain with 28% power-added efficiency at 21 dBm.

SST12LP20 has excellent linearity with typically 18 dBm at 3% EVM for 54 Mbps

802.11g modulation, while meeting 802.11g spectrum mask at 21 dBm. It requires

only two external bias components, and features easy board-level usage, along with

high-speed power-up/down control through a single combined reference voltage pin.

SST12LP20 is offered in an 8-contact USON package.

Features

• High gain:

• Small variation over temperature

– Typically 30 dB gain across 2.4–2.5 GHz over tempera-

– ~1 dB gain/power variation between 0°C to +85°C

ture 0°C to +85°C and 29 dB gain from -40°C to 0°C

• Excellent on-chip power detection

• High linear output power:

– >15 dB dynamic range, dB-wise Linear Temperature

stable and load insensitive

– >24 dBm P1dB

- Single-tone measurement. Please refer to “Absolute

Maximum Stress Ratings” on page 5

– Meets 802.11g OFDM ACPR requirement up to 21 dBm

– ~3% added EVM up to 18 dBm for 54 Mbps 802.11g

signal 802.11n HT20 ACPR requirement up to 18 dBm

– Meets 802.11b ACPR requirement up to 21 dBm

• Input port matched to 50Ω internally

• Both input and output ports are DC decoupled.

• Packages available

– 8-contact USON – 2mm x 2mm x 0.55mm

• High power-added efficiency/Low operating cur-

rent for 802.11b/g/n applications

• All non-Pb (lead-free) devices are RoHS compliant

– ~28%/138 mA @ P_OUT= 21 dBm for 802.11b/g

• Single-pin low I_REFpower-up/down control

– I_REF<2 mA

Applications

• WLAN (IEEE 802.11b/g/n)

• Low idle current

– ~78 mA I_CQ

• Home RF

• High-speed power-up/down

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay included

<200 ns

• Cordless phones

• 2.4 GHz ISM wireless equipment

• Low shut-down current (~2 µA)

www.microchip.com

DS70005049C

05/13

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