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SST12LP19E-QX8E PDF预览

SST12LP19E-QX8E

更新时间： 2024-11-08 21:18:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 放大器射频微波功率放大器
页数 文件大小 规格书
24页 450K
描述
RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER

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中文翻译

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SST12LP19E-QX8E 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SOLCC8,.08,16Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：8.6其他特性：HIGH RELIABILITY
特性阻抗：50 Ω构造：COMPONENT
增益：24 dB最大输入功率 (CW)：5 dBm
JESD-609代码：e3安装特点：SURFACE MOUNT
功能数量：1端子数量：8
最大工作频率：2484 MHz最小工作频率：2412 MHz
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：SOLCC8,.08,16
电源：3.3 V射频/微波设备类型：NARROW BAND MEDIUM POWER
子类别：RF/Microwave Amplifiers表面贴装：YES
端子面层：Matte Tin (Sn)Base Number Matches：1

SST12LP19E-QX8E 数据手册

 浏览型号SST12LP19E-QX8E的Datasheet PDF文件第2页浏览型号SST12LP19E-QX8E的Datasheet PDF文件第3页浏览型号SST12LP19E-QX8E的Datasheet PDF文件第4页浏览型号SST12LP19E-QX8E的Datasheet PDF文件第5页浏览型号SST12LP19E-QX8E的Datasheet PDF文件第6页浏览型号SST12LP19E-QX8E的Datasheet PDF文件第7页 
2.4 GHz High-Gain, High-Efficiency Power Amplifier  
SST12LP19E  
Data Sheet  
SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/  
GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power,  
high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n  
and 256 QAM applications. For WLAN applications, it typically provides 25 dB gain  
with 34% power-added efficiency. SST12LP19E has excellent linearity while meet-  
ing 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm.  
This power amplifier includes a power detector with dB-wise linear voltage output  
and features easy board-level usage along with high-speed power-up/down control  
through a single combined reference voltage pin. SST12LP19E and is offered in 6-  
contact XSON, 8-contact XSON, and 6-contact X2SON packages. Due to its small  
package size and high efficiency, this power amplifier is also well suited for ZigBee®  
and Bluetooth® applications.  
Features  
• Excellent RF Stability with Moderate Gain:  
• Low Shut-down Current (~2 µA)  
– Typically 25 dB gain across 2.4 – 2.5 GHz  
• High temperature stability  
• High linear output power:  
– ~1 dB gain/power variation between 0°C to +85°C  
– >26 dBm P1dB  
• Excellent On-chip power detection  
- Please refer to “Absolute Maximum Stress Ratings” on  
page 6  
– 20 dB dynamic range on-chip power detection  
– Meets 802.11g OFDM ACPR requirement up to 23.5  
dBm  
– 3% EVM up to 18 dBm (high-efficiency configuration) or  
~3% EVM up to 19.5 dBm (high-power configuration) for  
54 Mbps 802.11g signal  
– 2.5% EVM up to 16.5 dBm for MCS7–20 MHz band-  
width  
– 1.8% EVM up to 16 dBm for MCS9–40 MHz bandwidth  
– Meets 802.11b ACPR requirement up to 23 dBm  
– dB-wise linear output voltage  
– Temperature stable and load insensitive  
• Simple input/output matching  
• Packages available  
– 8-contact XSON – 2mm x 2mm x 0.5 mm max  
– 6-contact XSON – 1.5mm x 1.5mm x 0.5 mm max  
– 6-contact X2SON – 1.5mm x 1.5mm x 0.4mm max  
• High power-added efficiency/Low operating cur-  
rent for 802.11b/g/n applications  
• All non-Pb (lead-free) devices are RoHS compliant  
– ~34%/200 mA @ POUT = 23.5 dBm for 802.11g  
– ~31%/195 mA @ POUT = 23 dBm for 802.11b  
Applications  
• WLAN (IEEE 802.11b/g/n/256 QAM)  
• Single-pin low IREF power-up/down control  
– IREF <2 mA  
• Low idle current  
• Bluetooth  
– ~40-65 mA ICQ, depending on package type and config-  
uration.  
• ZigBee  
• High-speed power-up/down  
• Cordless phones  
– Turn on/off time (10%- 90%) <100 ns  
– Typical power-up/down delay with driver delay included  
<200 ns  
• 2.4 GHz ISM wireless equipment  
www.microchip.com  
©2014  
DS70005041D  
08/14  
 
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