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SST12LP17E-QU8E PDF预览

SST12LP17E-QU8E

更新时间： 2024-09-20 20:41:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP 电信光电二极管电信集成电路
页数 文件大小 规格书
15页 386K
描述
SPECIALTY TELECOM CIRCUIT

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SST12LP17E-QU8E 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：HVSON,Reach Compliance Code：compliant
HTS代码：8542.39.00.01风险等级：8.03
JESD-30 代码：S-PDSO-N8JESD-609代码：e3
长度：2 mm湿度敏感等级：3
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装形状：SQUARE封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：260座面最大高度：0.6 mm
标称供电电压：3.3 V表面贴装：YES
电信集成电路类型：TELECOM CIRCUIT温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：NO LEAD
端子节距：0.4 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：2 mm
Base Number Matches：1

SST12LP17E-QU8E 数据手册

 浏览型号SST12LP17E-QU8E的Datasheet PDF文件第2页浏览型号SST12LP17E-QU8E的Datasheet PDF文件第3页浏览型号SST12LP17E-QU8E的Datasheet PDF文件第4页浏览型号SST12LP17E-QU8E的Datasheet PDF文件第5页浏览型号SST12LP17E-QU8E的Datasheet PDF文件第6页浏览型号SST12LP17E-QU8E的Datasheet PDF文件第7页 
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module  
SST12LP17E  
Data Sheet  
SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module  
based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli-  
ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28%  
power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing  
3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm.  
This power amplifier requires no external RF matching, and only requires one exter-  
nal DC-bias capacitor to meet the specified performance. It offers high-speed  
power-up/-down control through a single reference voltage pin and includes a tem-  
perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is  
offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con-  
tact USON package.  
Features  
• Input/Output ports internally matched to 50and  
• Low shut-down current (~2 µA)  
DC decoupled  
• Stable performance over temperature  
• High gain:  
– ~2 dB gain variation between -40°C to +85°C  
– ~1 dB power variation between -40°C to +85°C  
– Typically 28 dB gain across 2.4–2.5 GHz  
• Excellent on-chip power detection  
• High linear output power:  
– >15 dB dynamic range, dB-wise linear  
– VSWR insensitive, temperature stable  
– >24 dBm P1dB  
- Single-tone measurement. Please refer to “Absolute  
Maximum Stress Ratings” on page 5  
– Meets 802.11g OFDM ACPR requirement up to 21.5  
dBm  
• Packages available  
– 8-contact X2SON – 2mm x 2mm x 0.4mm  
– 8-contact USON – 2mm x 2mm x 0.6mm  
– 3% EVM up to 18 dBm for 54 Mbps 802.11g signal  
– 2.5% EVM up to 17 dBm for 802.11n, MCS7, 40 MHz  
– Meets 802.11b ACPR requirement up to 22.5 dBm  
– Meets Bluetooth® spectrum mask for 3 Mbps at 17 dBm  
typical  
• Non-Pb (lead-free), RoHS compliant, and Halogen free  
• High power-added efficiency/Low operating cur-  
rent for 802.11b/g/n applications  
Applications  
• WLAN (IEEE 802.11b/g/n)  
– ~28%/138 mA @ POUT = 21.5 dBm for 802.11g  
– ~33%/155 mA @ POUT = 22.5 dBm for 802.11b  
• Bluetooth®  
• Single-pin low IREF power-up/down control  
– IREF <2 mA  
• Cordless phones  
• Low idle current  
• 2.4 GHz ISM wireless equipment  
– ~60 mA ICQ  
• High-speed power-up/down  
– Turn on/off time (10%- 90%) <100 ns  
– Typical power-up/down delay with driver delay included  
<200 ns  
www.microchip.com  
©2014 Silicon Storage Technology, Inc.  
DS-70005004G  
10/14  
 
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