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SST12LP14A-QVCE

更新时间： 2024-11-08 03:39:27
品牌 Logo 应用领域
SST 放大器射频微波功率放大器
页数 文件大小 规格书
18页 405K
描述
2.4 GHz High-Power, High-Gain Power Amplifier

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SST12LP14A-QVCE 数据手册

 浏览型号SST12LP14A-QVCE的Datasheet PDF文件第2页浏览型号SST12LP14A-QVCE的Datasheet PDF文件第3页浏览型号SST12LP14A-QVCE的Datasheet PDF文件第4页浏览型号SST12LP14A-QVCE的Datasheet PDF文件第5页浏览型号SST12LP14A-QVCE的Datasheet PDF文件第6页浏览型号SST12LP14A-QVCE的Datasheet PDF文件第7页 
2.4 GHz High-Power, High-Gain Power Amplifier  
SST12LP14A  
SST-GP1214A2.4 GHz High Gain High Power PA  
Preliminary Specifications  
FEATURES:  
•
High Gain:  
•
High temperature stability  
– Typically 29 dB gain across 2.4~2.5 GHz over  
temperature 0°C to +85°C  
– ~1 dB gain/power variation between 0°C to +85°C  
Low shut-down current (< 0.1 µA)  
Excellent On-chip power detection  
– <+/- 0.3dB variation between 0°C to +85°C  
– <+/- 0.4dB variation with 2:1 VSWR mismatch  
– <+/- 0.3dB variation Ch1 through Ch14  
20 dB dynamic range on-chip power detection  
Simple input/output matching  
•
•
•
High linear output power:  
– >28 dBm P1dB  
- Please refer to “Absolute Maximum Stress  
Ratings” on page 4  
– Meets 802.11g OFDM ACPR requirement up to  
23 dBm  
– ~4% added EVM up to 21 dBm for  
54 Mbps 802.11g signal  
– Meets 802.11b ACPR requirement up to 23 dBm  
•
•
•
Packages available  
– 16-contact VQFN – 3mm x 3mm  
All non-Pb (lead-free) devices are RoHS compliant  
•
High power-added efficiency/Low operating  
current for both 802.11g/b applications  
•
– ~23%/210 mA @ POUT = 22 dBm for 802.11g  
– ~25%/240 mA @ POUT = 23 dBm for 802.11b  
Single-pin low IREF power-up/down control  
– IREF <2 mA  
APPLICATIONS:  
•
•
•
•
•
•
•
WLAN (IEEE 802.11g/b)  
Home RF  
Cordless phones  
Low idle current  
– ~70 mA ICQ  
High-speed power-up/down  
2.4 GHz ISM wireless equipment  
– Turn on/off time (10%- 90%) <100 ns  
– Typical power-up/down delay with driver delay  
included <200 ns  
PRODUCT DESCRIPTION  
The SST12LP14A is a versatile power amplifier based on  
the highly-reliable InGaP/GaAs HBT technology.  
lable by an on/off switching signal directly from the base-  
band chip. These features coupled with low operating  
current make the SST12LP14A ideal for the final stage  
power amplification in battery-powered 802.11g/b WLAN  
transmitter applications.  
The SST12LP14A can be easily configured for high-power  
applications with good power-added efficiency while oper-  
ating over the 2.4- 2.5 GHz frequency band. It typically pro-  
vides 29 dB gain with 23% power-added efficiency @ POUT  
= 22 dBm for 802.11g and 25% power-added efficiency @  
The SST12LP14A has an excellent on-chip, single-ended  
power detector, which features wide-range (>15 dB) with  
dB-wise linearization and high stability over temperature (<  
+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across  
Channels 1 through 14), and output load (<+/-0.4 dB  
with 2:1 output VSWR all phases). The excellent on-  
chip power detector provides a reliable solution to  
board-level power control.  
POUT = 23 dBm for 802.11b.  
The SST12LP14A has excellent linearity, typically ~4%  
added EVM at 21 dBm output power which is essential for  
54 Mbps 802.11g operation while meeting 802.11g spec-  
trum mask at 23 dBm. The SST12LP14A can also be con-  
figured for high-efficiency operation (typically 17 dBm linear  
54 Mbps 802.11g output power at 85 mA total power con-  
sumption) which is desirable in embedded applications  
such as in hand-held units.  
The SST12LP14A is offered in 16-contact VQFN package.  
See Figure 2 for pin assignments and Table 1 for pin  
descriptions.  
The SST12LP14A also features easy board-level usage  
along with high-speed power-up/down control through a  
single combined reference voltage pin. Ultra-low reference  
current (total IREF ~2 mA) makes the SST12LP14A control-  
©2005 SST Communications Corp.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71300-02-000  
1
3/06  
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