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SST12LP14C-QVCE

更新时间： 2024-11-08 03:39:27
品牌 Logo 应用领域
SST 放大器射频微波功率放大器
页数 文件大小 规格书
14页 584K
描述
2.4 GHz High-Power, High-Gain Power Amplifier

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SST12LP14C-QVCE 数据手册

 浏览型号SST12LP14C-QVCE的Datasheet PDF文件第2页浏览型号SST12LP14C-QVCE的Datasheet PDF文件第3页浏览型号SST12LP14C-QVCE的Datasheet PDF文件第4页浏览型号SST12LP14C-QVCE的Datasheet PDF文件第5页浏览型号SST12LP14C-QVCE的Datasheet PDF文件第6页浏览型号SST12LP14C-QVCE的Datasheet PDF文件第7页 
2.4 GHz High-Power, High-Gain Power Amplifier  
SST12LP14C  
SST-GP1214A2.4 GHz High Gain High Power PA  
Preliminary Specifications  
FEATURES:  
•
High Gain:  
•
High temperature stability  
– Typically 32 dB gain across 2.4~2.5 GHz over  
temperature 0°C to +85°C  
– ~1 dB power variation between 0°C to +85°C  
Low shut-down current (< 0.1 µA)  
Excellent On-chip power detection  
– <+/- 0.5dB variation between 0°C to +85°C  
– <+/- 0.3dB variation Ch1 through Ch14  
•
•
•
High linear output power:  
– >26 dBm P1dB  
- Please refer to “Absolute Maximum Stress  
Ratings” on page 4  
– Meets 802.11g OFDM ACPR requirement up to  
23 dBm  
– ~4% added EVM up to 20 dBm for 54 Mbps  
802.11g signal  
– Meets 802.11b ACPR requirement up to 22.5  
dBm  
•
•
•
20 dB dynamic range on-chip power detection  
Simple input/output matching  
Packages available  
– 16-contact VQFN – 3mm x 3mm  
All non-Pb (lead-free) devices are RoHS compliant  
•
•
High power-added efficiency/Low operating  
current for both 802.11b/g applications  
APPLICATIONS:  
– ~29%/205 mA @ POUT = 23 dBm for 802.11g  
– ~27%/195 mA @ POUT = 22.5 dBm for 802.11b  
Single-pin low IREF power-up/-down control  
– IREF <2 mA  
Low idle current  
– ~100 mA ICQ  
•
•
•
•
WLAN (IEEE 802.11b/g)  
Home RF  
Cordless phones  
•
•
•
2.4 GHz ISM wireless equipment  
High-speed power-up/-down  
– Turn on/off time (10%- 90%) <100 ns  
– Typical power-up/-down delay with driver delay  
included <200 ns  
PRODUCT DESCRIPTION  
The SST12LP14C is a versatile power amplifier based on  
the highly-reliable InGaP/GaAs HBT technology.  
current make the this device ideal for the final stage power  
amplification in battery-powered 802.11b/g WLAN transmit-  
ter applications.  
The SST12LP14C can be easily configured for high-power  
applications with good power-added efficiency (PAE) while  
operating over the 2.4- 2.5 GHz frequency band. It typically  
provides 32 dB gain with 29% PAE @ POUT = 23 dBm for  
802.11g and 27% power-added efficiency @ POUT = 22.5  
dBm for 802.11b.  
This power amplifier has an excellent on-chip and single-  
ended power detector, which features a wide range  
(>15 dB) with dB-wise linearization and high stability over  
temperature (+/-0.5 dB 0°C to +85°C), and over frequency  
(<+/-0.3 dB across Channels 1 through 14). The on-chip  
power detector provides a reliable solution to board-level  
power control.  
This power amplifier has excellent linearity, typically ~4%  
added EVM at 20 dBm output power. This is essential for  
54 Mbps 802.11g operation while meeting 802.11g spec-  
trum mask up to 23 dBm.  
The SST12LP14C is offered in 16-contact VQFN package.  
See Figure 2 for pin assignments and Table 1 for pin  
descriptions.  
The SST12LP14C also features easy board-level usage  
along with high-speed power-up/-down control through a  
single combined reference voltage pin. Ultra-low reference  
current (total IREF ~2 mA) makes the SST12LP14C control-  
lable by an on/off switching signal directly from the base-  
band chip. These features coupled with low operating  
©2007 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71353-00-000  
1
02/07  
1234567...14

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