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SST12LP15B PDF预览

SST12LP15B

更新时间: 2024-09-21 01:10:31
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美国微芯 - MICROCHIP 局域网WLAN无线局域网
页数 文件大小 规格书
28页 469K
描述
2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier

SST12LP15B 数据手册

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2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier  
SST12LP15B  
Data Sheet  
SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/  
GaAs HBT technology. Easily configured for high-linear operation meeting the  
EVM requirements for 256 QAM applications, and for high-efficiency applications  
with excellent power-added efficiency while operating over the 2.4- 2.5 GHz fre-  
quency band. Configured for high efficiency, SST12LP15B will typically meet the  
802.11g spectrum mask at 23 dBm with 270 mA. Configured for high linearity,  
SST12LP15B will provide less than 2.5% EVM, up to 20 dBm, with MCS7-HT40  
modulation, and less than 1.75% EVM, up to 18 dBm, with MCS9-VHT40 modula-  
tion. This power amplifier also features easy board-level usage along with high-  
speed power-up/down control through the reference voltage pins. The  
SST12LP15B is offered in both a 3mm x 3mm, 16-contact VQFN package and a  
2mm x 2mm, 12-contact XQFN package.  
Features  
• High Gain:  
• High temperature stability  
– More than 32 dB gain across 2.4–2.5 GHz over tempera-  
ture -40°C to +85°C  
Typically 1 dB gain/power variation between 0°C to  
+85°C  
• Configured for High Linearity  
• Excellent On-chip power detection  
– 20 dBm at 2.5% DEVM, MCS7-HT40, 200mA  
– 18 dBm at 1.8% DEVM, MCS9-VHT40, 180 mA  
– 23 dBm typical spectrum mask compliance, MCS0-20  
– 20 dB linear dynamic range  
Temperature- and VSWR-insensitive  
• Simple input/output matching  
• Packages available  
• Configured for High Efficiency  
– 23 dBm at 3% DEVM, 802.11g OFDM 54 Mbps, 310mA  
– 25.5 dBm typical spectrum mask compliance, 802.11b,  
1Mbps  
– >29 dBm P1dB  
– Meets 802.11g OFDM ACPR requirement up to 26 dBm  
– 16-contact VQFN – 3mm x 3mm  
– 12-contact XQFN – 2mm x 2mm  
• All non-Pb (lead-free) devices are RoHS compliant  
• High power-added efficiency/Low operating current  
Applications  
• WLAN (IEEE 802.11b/g/n/256 QAM)  
• Low IREF current for power-up/down control  
– IREF <2 mA  
• High-speed power-up/down  
• Cordless phones  
Turn on/off time (10%- 90%) <100 ns  
Typical power-up/down delay with driver delay included  
<200 ns  
• 2.4 GHz ISM wireless equipment  
• Low Shut-down Current:2µA  
www.microchip.com  
©2014 Silicon Storage Technology, Inc.  
DS70005029C  
07/15  

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