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SST12LP15A PDF预览

SST12LP15A

更新时间: 2024-09-20 12:27:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 放大器功率放大器
页数 文件大小 规格书
15页 168K
描述
2.4 GHz High-Power and High-Gain Power Amplifier

SST12LP15A 数据手册

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2.4 GHz High-Power and High-Gain Power Amplifier  
SST12LP15A  
Data Sheet  
The SST12LP15A is a high-power and high-gain power amplifier based on the  
highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power  
applications with superb power-added efficiency while operating over the 2.4-2.5  
GHz frequency band, it typically provides 32 dB gain with 26% power-added effi-  
ciency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT  
=
25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting  
802.11g spectrum mask at 25 dBm. The power amplifier IC features easy board-  
level usage along with high-speed power-up/down control and is offered in 16-  
contact VQFN package  
Features  
• High Gain:  
• High temperature stability  
Typically 32 dB gain across 2.4–2.5 GHz over tempera-  
ture 0°C to +85°C  
– ~1 dB gain/power variation between 0°C to +85°C  
– ~1 dB detector variation over 0°C to +85°C  
• High linear output power:  
• Low shut-down current (~1 µA)  
• On-chip power detection  
– >29 dBm P1dB  
- Please refer to “Absolute Maximum Stress Ratings” on  
page 5  
• 25 dB dynamic range on-chip power detection  
• Simple input/output matching  
– Meets 802.11g OFDM ACPR requirement up to 25 dBm  
– Added EVM~4% up to 23 dBm for  
54 Mbps 802.11g signal  
– Meets 802.11b ACPR requirement up to 25 dBm  
• Packages available  
• High power-added efficiency/Low operating cur-  
rent for both 802.11g/b applications  
– 16-contact VQFN (3mm x 3mm)  
• All non-Pb (lead-free) devices are RoHS compliant  
– ~26%/300 mA @ POUT = 24 dBm for 802.11g  
– ~27%/350 mA @ POUT = 25 dBm for 802.11b  
• Built-in Ultra-low IREF power-up/down control  
Applications  
– IREF ~2 mA  
• WLAN (IEEE 802.11b/g/n)  
• Low idle current  
– ~80 mA ICQ  
• Home RF  
• High-speed power-up/down  
• Cordless phones  
Turn on/off time (10%-90%) <100 ns  
Typical power-up/down delay with driver delay included  
<200 ns  
• 2.4 GHz ISM wireless equipment  
www.microchip.com  
©2013 Silicon Storage Technology, Inc.  
DS75056A  
04/13  

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