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SST12LP14-QVC-K

更新时间： 2024-11-08 03:39:27
品牌 Logo 应用领域
SST 放大器功率放大器
页数 文件大小 规格书
12页 227K
描述
2.4 GHz Power Amplifier

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SST12LP14-QVC-K 数据手册

 浏览型号SST12LP14-QVC-K的Datasheet PDF文件第2页浏览型号SST12LP14-QVC-K的Datasheet PDF文件第3页浏览型号SST12LP14-QVC-K的Datasheet PDF文件第4页浏览型号SST12LP14-QVC-K的Datasheet PDF文件第5页浏览型号SST12LP14-QVC-K的Datasheet PDF文件第6页浏览型号SST12LP14-QVC-K的Datasheet PDF文件第7页 
2.4 GHz Power Amplifier  
SST12LP14  
SST12LP142.4 GHz Power Amplifier  
Preliminary Specifications  
FEATURES:  
•
High Gain:  
•
High temperature stability  
– Typically 30 dB gain across 2.4~2.5 GHz over  
temperature 0°C to +80°C  
– ~1 dB gain/power variation between 0°C to +80°C  
– ~1 dB detector variation over 0°C to +80°C  
•
High linear output power:  
•
•
•
•
•
Low shut-down current (< 0.1 µA)  
On-chip power detection  
– >26.5 dBm P1dB  
– Meets 802.11g OFDM ACPR requirement up to  
23 dBm  
– Added EVM ~4% up to 20 dBm for  
54 Mbps 802.11g signal  
25 dB dynamic range on-chip power detection  
Simple input/output matching  
Packages available  
– Meets 802.11b ACPR requirement up to 24 dBm  
– 16-contact VQFN (3mm x 3mm)  
– Non-Pb (lead-free) packages available  
•
High power-added efficiency/Low operating  
current for both 802.11g/b applications  
APPLICATIONS:  
– ~22% @ POUT = 22 dBm for 802.11g  
– ~26% @ POUT = 23.5 dBm for 802.11b  
•
•
•
•
WLAN (IEEE 802.11g/b)  
Home RF  
•
•
•
Built-in Ultra-low IREF power-up/down control  
– IREF <4 mA  
Cordless phones  
Low idle current  
2.4 GHz ISM wireless equipment  
– ~60 mA ICQ  
High-speed power-up/down  
– Turn on/off time (10%~90%) <100 ns  
– Typical power-up/down delay with driver delay  
included <200 ns  
PRODUCT DESCRIPTION  
The SST12LP14 is a high-performance power amplifier IC  
based on the highly-reliable InGaP/GaAs HBT technology.  
The power amplifier IC also features easy board-level  
usage along with high-speed power-up/down control. Ultra-  
low reference current (total IREF <4 mA) makes the  
SST12LP14 controllable by an on/off switching signal  
directly from the baseband chip. These features coupled  
with low operating current make the SST12LP14 ideal for  
the final stage power amplification in battery-powered  
802.11g/b WLAN transmitter applications.  
The SST12LP14 can be easily configured for high-power,  
high-efficiency applications with superb power-added effi-  
ciency while operating over the 2.4~2.5 GHz frequency  
band. It typically provides 30 dB gain with 22% power-  
added efficiency @ POUT = 22 dBm for 802.11g and 27%  
power-added efficiency @ POUT = 24 dBm for 802.11b.  
The SST12LP14 is offered in 16-contact VQFN package.  
See Figure 1 for pin assignments and Table 1 for pin  
descriptions.  
The SST12LP14 has excellent linearity, typically <4%  
added EVM up to 20 dBm output power which is essential  
for 54 Mbps 802.11g operation while meeting 802.11g  
spectrum mask at 23 dBm. The SST12LP14 also has  
wide-range (>25 dB), temperature-stable (~1 dB over  
80°C), single-ended/differential power detectors which  
lower users’ cost on power control.  
©2005 SST Communications Corp.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71279-00-000  
1
1/05  
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