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SST12LP15A-QVC

更新时间： 2024-11-10 20:06:23
品牌 Logo 应用领域
芯科 - SILICON 射频微波
页数 文件大小 规格书
12页 218K
描述
Narrow Band Medium Power Amplifier, 2400MHz Min, 2485MHz Max, 1 Func, 3 X 3 MM, MO-220JVEED, VQFN-16

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SST12LP15A-QVC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：LCC16,.12SQ,20Reach Compliance Code：unknown
风险等级：5.13其他特性：HIGH RELIABILITY
特性阻抗：50 Ω构造：COMPONENT
增益：31 dB最大输入功率 (CW)：5 dBm
JESD-609代码：e0安装特点：SURFACE MOUNT
功能数量：1端子数量：16
最大工作频率：2485 MHz最小工作频率：2400 MHz
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：LCC16,.12SQ,20
电源：3.3 V射频/微波设备类型：NARROW BAND MEDIUM POWER
子类别：RF/Microwave Amplifiers表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)最大电压驻波比：10
Base Number Matches：1

SST12LP15A-QVC 数据手册

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2.4 GHz High-Power and High-Gain Power Amplifier  
SST12LP15A  
SST-GP1215A2.4 GHz High Gain High Power PA  
Data Sheet  
FEATURES:  
•
High Gain:  
•
High temperature stability  
– Typically 32 dB gain across 2.4-2.5 GHz over  
temperature 0°C to +85°C  
– ~1 dB gain/power variation between 0°C to +85°C  
– ~1 dB detector variation over 0°C to +85°C  
•
High linear output power:  
– >29 dBm P1dB  
- Please refer to “Absolute Maximum Stress  
Ratings” on page 4  
– Meets 802.11g OFDM ACPR requirement up to  
25 dBm  
•
•
•
•
•
Low shut-down current (< 0.1 µA)  
On-chip power detection  
25 dB dynamic range on-chip power detection  
Simple input/output matching  
Packages available  
– Added EVM~4% up to 23 dBm for  
54 Mbps 802.11g signal  
– Meets 802.11b ACPR requirement up to 25 dBm  
– 16-contact VQFN (3mm x 3mm)  
– Non-Pb (lead-free) packages available  
•
High power-added efficiency/Low operating  
current for both 802.11g/b applications  
APPLICATIONS:  
•
•
•
•
WLAN (IEEE 802.11g/b)  
Home RF  
Cordless phones  
– ~26%/300 mA @ POUT = 24 dBm for 802.11g  
– ~27%/350 mA @ POUT = 25 dBm for 802.11b  
Built-in Ultra-low IREF power-up/down control  
– IREF ~2 mA  
•
•
•
2.4 GHz ISM wireless equipment  
Low idle current  
– ~70 mA ICQ  
High-speed power-up/down  
– Turn on/off time (10%-90%) <100 ns  
– Typical power-up/down delay with driver delay  
included <200 ns  
PRODUCT DESCRIPTION  
The SST12LP15A is a high-power and high-gain power  
amplifier based on the highly-reliable InGaP/GaAs HBT  
technology.  
The power amplifier IC also features easy board-level  
usage along with high-speed power-up/down control. Ultra-  
low reference current (total IREF ~2 mA) makes the  
SST12LP15A controllable by an on/off switching signal  
directly from the baseband chip. These features coupled  
with low operating current make the SST12LP15A ideal for  
the final stage power amplification in battery-powered  
802.11g/b WLAN transmitter applications.  
The SST12LP15A can be easily configured for high-power  
applications with superb power-added efficiency while  
operating over the 2.4-2.5 GHz frequency band. It typically  
provides 32 dB gain with 26% power-added efficiency @  
POUT = 24 dBm for 802.11g and 27% power-added effi-  
ciency @ POUT = 25 dBm for 802.11b.  
The SST12LP15A is offered in 16-contact VQFN package.  
See Figure 2 for pin assignments and Table 1 for pin  
descriptions.  
The SST12LP15A has excellent linearity, typically ~4%  
added EVM at 23 dBm output power which is essential for  
54 Mbps 802.11g operation while meeting 802.11g spec-  
trum mask at 25 dBm. SST12LP15A also has wide-range  
(>25 dB), temperature-stable (~1 dB over 85°C), single-  
ended/differential power detectors which lower users’ cost  
on power control.  
©2005 SST Communications Corp.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71291-01-000  
1
3/06  
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