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SST12LP14A-QVC

更新时间： 2024-09-20 19:53:15
品牌 Logo 应用领域
芯科 - SILICON 射频微波
页数 文件大小 规格书
19页 327K
描述
Narrow Band Medium Power Amplifier, 2400MHz Min, 2485MHz Max, 3 X 3 MM, VQFN PACKAGE-16

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中文翻译

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SST12LP14A-QVC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.05
其他特性：HIGH RELIABILITY特性阻抗：50 Ω
构造：COMPONENT增益：28 dB
最大输入功率 (CW)：5 dBm最大工作频率：2485 MHz
最小工作频率：2400 MHz最高工作温度：85 °C
最低工作温度：-40 °C射频/微波设备类型：NARROW BAND MEDIUM POWER
最大电压驻波比：2Base Number Matches：1

SST12LP14A-QVC 数据手册

 浏览型号SST12LP14A-QVC的Datasheet PDF文件第2页浏览型号SST12LP14A-QVC的Datasheet PDF文件第3页浏览型号SST12LP14A-QVC的Datasheet PDF文件第4页浏览型号SST12LP14A-QVC的Datasheet PDF文件第5页浏览型号SST12LP14A-QVC的Datasheet PDF文件第6页浏览型号SST12LP14A-QVC的Datasheet PDF文件第7页 
2.4 GHz High-Power, High-Gain Power Amplifier  
SST12LP14A  
SST-GP1214A2.4 GHz High Gain High Power PA  
Preliminary Specifications  
FEATURES:  
•
Medium Gain:  
•
High temperature stability  
– Typically 29 dB gain across 2.4~2.5 GHz over  
temperature 0°C to +85°C  
– ~1 dB gain/power variation between 0°C to +85°C  
Low shut-down current (< 0.1 µA)  
•
•
•
High linear output power:  
Excellent On-chip power detection  
– >29 dBm P1dB (Exceeding maximum rating of  
average output power, never measure with CW  
source! Pulsed single-tone source with <50%  
duty cycle is recommended.)  
– Meets 802.11g OFDM ACPR requirement up to  
23 dBm  
– ~4% added EVM up to 21.5 dBm for  
54 Mbps 802.11g signal  
– Meets 802.11b ACPR requirement up to 23 dBm  
– <+/- 0.3dB variation between 0°C to +85°C  
– <+/- 0.4dB variation with 2:1 VSWR mismatch  
– <+/- 0.3dB variation Ch1 through Ch14  
•
•
•
20 dB dynamic range on-chip power detection  
Simple input/output matching  
Packages available  
– 16-contact VQFN (3mm x 3mm)  
– Non-Pb (lead-free) packages available  
•
High power-added efficiency/Low operating  
current for both 802.11g/b applications  
APPLICATIONS:  
– ~23%/210 mA @ POUT = 22 dBm for 802.11g  
– ~25%/240 mA @ POUT = 23 dBm for 802.11b  
•
•
•
•
WLAN (IEEE 802.11g/b)  
Home RF  
•
•
•
Single-pin low IREF power-up/down control  
– IREF <2 mA  
Cordless phones  
Low idle current  
2.4 GHz ISM wireless equipment  
– ~70 mA ICQ  
High-speed power-up/down  
– Turn on/off time (10%~90%) <100 ns  
– Typical power-up/down delay with driver delay  
included <200 ns  
PRODUCT DESCRIPTION  
The SST12LP14A is a versatile power amplifier based on  
the highly-reliable InGaP/GaAs HBT technology.  
lable by an on/off switching signal directly from the base-  
band chip. These features coupled with low operating  
current make the SST12LP14A ideal for the final stage  
power amplification in battery-powered 802.11g/b WLAN  
transmitter applications.  
The SST12LP14A can be easily configured for high-power  
applications with good power-added efficiency while oper-  
ating over the 2.4~2.5 GHz frequency band. It typically pro-  
vides 29 dB gain with 23% power-added efficiency @ POUT  
= 22 dBm for 802.11g and 25% power-added efficiency @  
The SST12LP14A has an excellent on-chip, single-ended  
power detector, which features wide-range (>15 dB) with  
dB-wise linearization and high stability over temperature (<  
+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across  
Channels 1 through 14), and output load (<+/-0.4 dB  
with 2:1 output VSWR all phases). The excellent on-  
chip power detector provides a reliable solution to  
board-level power control.  
POUT = 23 dBm for 802.11b.  
The SST12LP14A has excellent linearity, typically ~4%  
added EVM at 21.5 dBm output power which is essential  
for 54 Mbps 802.11g operation while meeting 802.11g  
spectrum mask at 23 dBm. The SST12LP14A can also be  
configured for high-efficiency operation (typically 17 dBm  
linear 54 Mbps 802.11g output power at 85 mA total power  
consumption) which is desirable in embedded applications  
such as in hand-held units.  
The SST12LP14A is offered in 16-contact VQFN package.  
See Figure 1 for pin assignments and Table 1 for pin  
descriptions.  
The SST12LP14A also features easy board-level usage  
along with high-speed power-up/down control through a  
single combined reference voltage pin. Ultra-low reference  
current (total IREF ~2 mA) makes the SST12LP14A control-  
©2005 SST Communications Corp.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71300-01-000  
1
9/05  
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中文翻译

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