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SST12LP08-QXBE PDF预览

SST12LP08-QXBE

更新时间： 2024-11-08 15:52:55
品牌 Logo 应用领域
芯科 - SILICON 射频微波
页数 文件大小 规格书
12页 444K
描述
Narrow Band Medium Power Amplifier, 2412MHz Min, 2484MHz Max, 2 X 2 MM, ROHS COMPLIANT, MO-220JVEED-4, QFN-12

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中文翻译

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SST12LP08-QXBE 技术参数

生命周期：TransferredReach Compliance Code：unknown
风险等级：5.14Is Samacsys：N
其他特性：HIGH RELIABILITY特性阻抗：50 Ω
构造：COMPONENT增益：29 dB
最大输入功率 (CW)：5 dBm最大工作频率：2484 MHz
最小工作频率：2412 MHz最高工作温度：85 °C
最低工作温度：-40 °C射频/微波设备类型：NARROW BAND MEDIUM POWER
Base Number Matches：1

SST12LP08-QXBE 数据手册

 浏览型号SST12LP08-QXBE的Datasheet PDF文件第2页浏览型号SST12LP08-QXBE的Datasheet PDF文件第3页浏览型号SST12LP08-QXBE的Datasheet PDF文件第4页浏览型号SST12LP08-QXBE的Datasheet PDF文件第5页浏览型号SST12LP08-QXBE的Datasheet PDF文件第6页浏览型号SST12LP08-QXBE的Datasheet PDF文件第7页 
2.4 GHz High-Power, High-Gain Power Amplifier  
SST12LP08  
Preliminary Specification  
FEATURES:  
•
High Gain:  
•
•
Low Shut-down Current (~2 µA)  
High temperature stability  
– ~1 dB gain/power variation between 0°C to +85°C  
Excellent On-chip power detection  
20 dB dynamic range on-chip power detection  
Simple input/output matching  
Packages available  
– 12-contact XQFN – 2mm x 2mm  
All non-Pb (lead-free) devices are RoHS compliant  
– Typically 30 dB gain across 2.4~2.5 GHz over  
temperature 0°C to +85°C  
•
High linear output power:  
– >28 dBm P1dB  
- Please refer to “Absolute Maximum Stress  
Ratings” on page 4  
– Meets 802.11g OFDM ACPR requirement up to  
23.5 dBm  
•
•
•
•
– ~3% added EVM up to 20 dBm for  
54 Mbps 802.11g signal  
•
– Meets 802.11b ACPR requirement up to 23.5 dBm  
•
High power-added efficiency/Low operating  
current for both 802.11g/b applications  
APPLICATIONS:  
– ~34%/200 mA @ POUT = 23.5 dBm for 802.11b/g  
Single-pin low IREF power-up/down control  
– IREF <2 mA  
Low idle current  
– ~85 mA ICQ  
•
•
•
•
WLAN (IEEE 802.11b/g)  
Home RF  
Cordless phones  
•
•
•
2.4 GHz ISM wireless equipment  
High-speed power-up/down  
– Turn on/off time (10%- 90%) <100 ns  
– Typical power-up/down delay with driver delay  
included <200 ns  
PRODUCT DESCRIPTION  
The SST12LP08 is a versatile power amplifier based on  
the highly-reliable InGaP/GaAs HBT technology.  
The SST12LP08 has an excellent on-chip, single-ended  
power detector, which features wide-range (>15 dB) with  
dB-wise linearization. The excellent on-chip power  
detector provides a reliable solution to board-level  
power control.  
The SST12LP08 can be easily configured for high-power  
applications with good power-added efficiency while oper-  
ating over the 2.4- 2.5 GHz frequency band. It typically pro-  
vides 30 dB gain with 34% power-added efficiency (PAE)  
@ POUT = 23.5 dBm for 802.11b/g.  
The SST12LP08 is offered in 12-contact XQFN package.  
See Figure 2 for pin assignments and Table 1 for pin  
descriptions.  
The SST12LP08 has excellent linearity, typically ~3%  
added EVM at 20 dBm output power which is essential for  
54 Mbps 802.11g operation while meeting 802.11g spec-  
trum mask at 23.5 dBm.  
The SST12LP08 also features easy board-level usage  
along with high-speed power-up/down control through a  
single combined reference voltage pin. Ultra-low reference  
current (total IREF ~2 mA) makes the SST12LP08 controlla-  
ble by an on/off switching signal directly from the baseband  
chip. These features coupled with low operating current  
make the SST12LP08 ideal for the final stage power ampli-  
fication in battery-powered 802.11g/b WLAN transmitter  
applications.  
©2009 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71399-01-000  
1
05/09  
1234567...12

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