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SST12LP08-QXBE PDF预览

SST12LP08-QXBE

更新时间： 2024-11-10 21:16:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 放大器射频微波功率放大器
页数 文件大小 规格书
18页 359K
描述
2412 MHz - 2484 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, ROHS COMPLIANT, MO-220JVEED-4, QFN-12

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SST12LP08-QXBE 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Not Recommended包装说明：LCC12,.08SQ,16
Reach Compliance Code：compliantFactory Lead Time：13 weeks
风险等级：7.54Is Samacsys：N
其他特性：HIGH RELIABILITY特性阻抗：50 Ω
构造：COMPONENT增益：29 dB
最大输入功率 (CW)：5 dBmJESD-609代码：e3
安装特点：SURFACE MOUNT功能数量：1
端子数量：12最大工作频率：2484 MHz
最小工作频率：2412 MHz最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装等效代码：LCC12,.08SQ,16电源：3.3 V
射频/微波设备类型：NARROW BAND MEDIUM POWER子类别：RF/Microwave Amplifiers
表面贴装：YES端子面层：Matte Tin (Sn) - annealed
Base Number Matches：1

SST12LP08-QXBE 数据手册

 浏览型号SST12LP08-QXBE的Datasheet PDF文件第2页浏览型号SST12LP08-QXBE的Datasheet PDF文件第3页浏览型号SST12LP08-QXBE的Datasheet PDF文件第4页浏览型号SST12LP08-QXBE的Datasheet PDF文件第5页浏览型号SST12LP08-QXBE的Datasheet PDF文件第6页浏览型号SST12LP08-QXBE的Datasheet PDF文件第7页 
2.4 GHz High-Power, High-Gain Power Amplifier  
SST12LP08  
A Microchip Technology Company  
Data Sheet  
The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/  
GaAs HBT technology. Easily configured for linear high-power applications with  
excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency  
band, it typically provides 30 dB gain with 34% power-added efficiency, while  
meeting 802.11b/g spectrum mask at 23.5 dBm. The SST12LP08 also features  
easy board-level usage along with high-speed power-up/down control through a  
single combined reference voltage pin and is offered in both 12-contact XQFN  
and 6-contact XSON packages.  
Features  
• High Gain:  
• Low Shut-down Current (~2 µA)  
– Typically 30 dB gain across 2.4~2.5 GHz over tempera-  
ture 0°C to +85°C  
• High temperature stability  
– ~1 dB gain/power variation between 0°C to +85°C  
• High linear output power:  
• Excellent On-chip power detection  
• 20 dB dynamic range on-chip power detection  
• Simple input/output matching  
• Packages available  
– >28 dBm P1dB  
- Please refer to “Absolute Maximum Stress Ratings” on  
page 6  
– Meets 802.11g OFDM ACPR requirement up to 23.5  
dBm  
– ~3% added EVM up to 20 dBm for  
54 Mbps 802.11g signal  
– Meets 802.11b ACPR requirement up to 23.5 dBm  
– 12-contact XQFN – 2mm x 2mm  
– 6-contact XSON – 1.5mm x 1.5mm  
• High power-added efficiency/Low operating cur-  
rent for both 802.11g/b applications  
• All non-Pb (lead-free) devices are RoHS compliant  
– ~34%/200 mA @ POUT = 23.5 dBm for 802.11b/g  
• Single-pin low IREF power-up/down control  
– IREF <2 mA  
Applications  
• WLAN (IEEE 802.11b/g/n)  
• Low idle current  
– ~85 mA ICQ for 12-contact XQFN  
– ~65 mA ICQ for 6-contact XSON  
• Home RF  
• High-speed power-up/down  
• Cordless phones  
– Turn on/off time (10%- 90%) <100 ns  
– Typical power-up/down delay with driver delay included  
<200 ns  
• 2.4 GHz ISM wireless equipment  
www.microchip.com  
©2012 Silicon Storage Technology, Inc.  
DS75073B  
06/12  
1234567...18

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