Datasheet > SST12LF09-Q3CE-K

SST12LF09-Q3CE-K

更新时间： 2024-09-20 12:01:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
15页	364K
描述
2.4 GHz High-Gain, High-Efficiency Front-end Module

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SST12LF09-Q3CE-K 数据手册

SST12LF09

2.4 GHz High-Gain, High-Efficiency Front-end Module

FEATURES

APPLICATIONS

• Input/output ports internally matched to 50Ω and

DC decoupled

• WLAN (IEEE 802.11b/g/n)

• Home RF

• Package available

• Cordless phones

- 16-contact XQFN – 2.5mm x 2.5mmx 0.4mm

• All non-Pb (lead-free) devices are RoHS compliant

• 2.4 GHz ISM wireless equipment

1.0

PRODUCT DESCRIPTION

Transmitter Chain

SST12LF09 is a 2.4 GHz Front-end Module (FEM)

designed in compliance with IEEE 802.11b/g/n applica-

tions. Based on GaAs pHEMT/HBT technology, it com-

bines a high-performance Power Amplifier (PA), a low-

noise amplifier (LNA) and an antenna Tx/Rx switch

(SW). The input/output RF ports are single-ended and

internally matched to 50 Ω. These RF ports are DC

decoupled, and require no DC-blocking capacitors or

matching components. This helps reduce the system

board Bill of Materials (BOM) cost.

•

Gain:

- Typically 24 dB gain

• Dynamic linear output power:

- Meets 802.11g OFDM ACPR requirement up to

21 dBm

- 3% EVM up to 17 dBm for 802.11g, 54 Mbps

- 1.75% dynamic EVM up to 15 dBm for 256 QAM,

40 MHz bandwidth

• Operating current for 802.11g/n applications

There are two components to the FEM: the Transmitter

(TX) chain and the Receiver (RX) chain.

- 170mA @ P_OUT= 17 dBm for 802.11g

- 130 mA @ P_OUT= 15 dBm for 802.11n

The TX chain includes a high-efficiency PA based on

the InGaP/GaAs HBT technology. The transmitter is

optimized for high linearity, 802.11n and 256 QAM

operation–typically providing 15 dBm with 1.75%

dynamic EVM for 256 QAM, 40 MHz operation and 17

dBm at 3% for 802.11g, 54 Mbps operation.

• PA Control current, I_PEN:<2mA

• Idle current, I_CQ:105mA

• Low shut-down current: ~2 µA

• Power-up/down control

- Turn on/off time (10%–90%) <400 ns

• Limited variation over temperature

- ~1 dB gain/power variation between -40°C to +85°C

• Linear on-chip power detection

SST12LF09 has an excellent transmitter on-chip, sin-

gle-ended power detector that is stable over tempera-

ture and insensitive to output VSWR. It features a wide

dynamic-range (20 dB) with dB-wise linear operation.

The on-chip power detector provides a reliable solution

to board-level power control.

- Load and temperature insensitive

- >20 dB dynamic range on-chip power detection

The Rx chain provides typically 13 dB gain with 2.5 dB

noise figure. With the LNA bypassed, the receiver loss

is typically 9 dB. SST12LF09 also features a Blue-

tooth^®path with typically 1.0 dB loss.

Receiver Chain

• Gain: Typically 13 dB gain

• Noise figure: Typically 2.5 dB

• Receiver input P1dB: Typically -6 dBm

• LNA bypass loss: Typically 9 dB

SST12LF09 is offered in a16-contact X2QFN package.

See Figure 3-1 for pin assignments and Table 4-1 for

pin descriptions.

Bluetooth^®Chain

• Loss: 1.0 dB

• Output P1dB: >25 dBm

 2013 Microchip Technology Inc.

DS75083A-page 1

12 3 4 5 6 7...15

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