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SST12LN01-QU6F PDF预览

SST12LN01-QU6F

更新时间: 2024-11-08 02:57:15
品牌 Logo 应用领域
SST 放大器射频微波
页数 文件大小 规格书
11页 289K
描述
2.4-2.5 GHz Low-Noise Amplifier

SST12LN01-QU6F 数据手册

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2.4-2.5 GHz Low-Noise Amplifier  
SST12LN01  
SST12L012.4-2.5 GHz Low-Noise Amplifier  
Preliminary Specifications  
FEATURES:  
APPLICATIONS:  
Suitable Gain:  
Typically 12-13 dB gain across 2.4–2.5 GHz  
Low Noise Figure:  
– 1.2-1.5 dB across 2.4–2.5 GHz  
IIP3:  
– 3 dBm across 2.4–2.5 GHz  
Low Current Consumption  
– 12 mA across 2.4–2.5 GHz  
50Ω Input/Output Matched  
Packages available  
WLAN  
Bluetooth  
Wireless Network  
– 16-contact UQFN – 3 mm x 1.6 mm  
All non-Pb (lead-free) devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST12LN01 is a cost effective Low Noise Amplifier  
(LNA) which does not require external RF-matching com-  
ponents on PCB applications. This device is based on the  
0.5µm GaAs PHEMT technology, and complies with  
802.11 b/g applications.  
SST12LN01 provides high-performance, low-noise, and  
mild-gain operations within the 2.4–2.5 GHz frequency  
band. Across this frequency band, this device typically pro-  
vides 12-13 dB gain.  
This LNA cell is equipped with a self DC-biasing scheme,  
which helps keep the DC consumption very low during  
operation. A pair of singled-ended, input and output ports is  
assigned to the LNA cell with a 50 RF match.  
The SST12LN01 is offered in a 6-contact UQFN package.  
See Figure 2 for pin assignments and Table 1 for pin  
descriptions.  
©2006 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71329-00-000  
1
9/06  

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