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SST12LP07

更新时间： 2024-11-08 04:02:39
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SST 放大器功率放大器
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14页 509K
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2.4 GHz High-Power, High-Gain Power Amplifier

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SST12LP07 数据手册

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2.4 GHz High-Power, High-Gain Power Amplifier  
SST12LP07  
SST12LP072.4 GHz High Gain High Power PA  
Preliminary Specifications  
FEATURES:  
•
High Gain:  
•
High temperature stability  
– Typically 29 dB gain across 2.4–2.5 GHz over  
temperature 0°C to +85°C  
– ~1 dB gain/power variation between 0°C to +85°C  
Low shut-down current (< 0.1 µA)  
Excellent On-chip power detection  
– <+/- 0.3dB variation between 0°C to +85°C  
– <+/- 0.4dB variation with 2:1 VSWR mismatch  
– <+/- 0.3dB variation Ch1 through Ch14  
20 dB dynamic range on-chip power detection  
Simple input/output matching  
•
•
•
High linear output power:  
– >26 dBm P1dB  
- Please refer to “Absolute Maximum Stress  
Ratings” on page 4  
– Meets 802.11g OFDM ACPR requirement up to  
22 dBm  
– ~2.5% added EVM up to 19 dBm for  
54 Mbps 802.11g signal  
– Meets 802.11b ACPR requirement up to 22 dBm  
•
•
•
Packages available  
– 16-contact VQFN – 3mm x 3mm  
All non-Pb (lead-free) devices are RoHS compliant  
•
High power-added efficiency/Low operating  
current for both 802.11g/b applications  
•
– ~22%/220 mA @ POUT = 22 dBm for 802.11g  
– ~21%/230 mA @ POUT = 22 dBm for 802.11b  
Single-pin low IREF power-up/down control  
– IREF <2 mA  
APPLICATIONS:  
•
•
•
•
•
•
•
WLAN (IEEE 802.11g/b)  
Home RF  
Cordless phones  
Low idle current  
– ~70 mA ICQ  
High-speed power-up/down  
2.4 GHz ISM wireless equipment  
– Turn on/off time (10%- 90%) <100 ns  
– Typical power-up/down delay with driver delay  
included <200 ns  
PRODUCT DESCRIPTION  
The SST12LP07 is a versatile power amplifier based on  
the highly-reliable InGaP/GaAs HBT technology.  
ble by an on/off switching signal directly from the baseband  
chip. These features coupled with low operating current  
make the SST12LP07 ideal for the final stage power ampli-  
fication in battery-powered 802.11g/b WLAN transmitter  
applications.  
The SST12LP07 can be easily configured for high-power  
applications with good power-added efficiency while oper-  
ating over the 2.4- 2.5 GHz frequency band. This device  
typically provides 29 dB gain with 22% power-added effi-  
ciency @ POUT = 22 dBm for 802.11g and 21% power-  
added efficiency @ POUT = 22 dBm for 802.11b.  
The SST12LP07 has an excellent on-chip, single-ended  
power detector, which features wide-range (~20 dB) with  
dB-wise linearization and high stability over temperature (<  
+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across  
Channels 1 through 14), and output load (<+/-0.4 dB  
with 2:1 output VSWR all phases). The excellent on-  
chip power detector provides a reliable solution to  
board-level power control.  
The SST12LP07 has excellent linearity, typically ~2.5%  
added EVM at 19 dBm output power which is essential for  
54 Mbps 802.11g/n operation while meeting 802.11g spec-  
trum mask at 22 dBm. The SST12LP07 can also be config-  
ured for high-efficiency operation, typically 17 dBm linear 54  
Mbps 802.11g output power at 85 mA total power con-  
sumption. High-efficiency operation is desirable in embed-  
ded applications such as in hand-held units.  
The SST12LP07 is offered in a 16-contact VQFN package.  
See Figure 2 for pin assignments and Table 1 for pin  
descriptions.  
The SST12LP07 also features easy board-level usage  
along with high-speed power-up/down control through a  
single combined reference voltage pin. Ultra-low reference  
current (total IREF ~2 mA) makes the SST12LP07 controlla-  
©2006 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71321-00-000  
1
5/06  
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