5秒后页面跳转
捷配首页

Datasheet > SST12LP00-QV6E
SST12LP00-QV6E PDF预览

SST12LP00-QV6E

更新时间： 2024-09-20 20:25:31
品牌 Logo 应用领域
芯科 - SILICON 射频微波
页数 文件大小 规格书
14页 477K
描述
Narrow Band Medium Power Amplifier, 2402MHz Min, 2480MHz Max, 1 Func, 3 X 3 MM, ROHS COMPLIANT, MO-220IVEED, VQFN-16

阅读下载

中文翻译

获取价格

SST12LP00-QV6E 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：LCC6(UNSPEC)
Reach Compliance Code：unknown风险等级：5.59
Is Samacsys：N其他特性：HIGH RELIABILITY
特性阻抗：50 Ω构造：COMPONENT
增益：27 dB最大输入功率 (CW)：10 dBm
JESD-609代码：e3安装特点：SURFACE MOUNT
功能数量：1端子数量：6
最大工作频率：2480 MHz最小工作频率：2402 MHz
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：LCC6(UNSPEC)
电源：3.3 V射频/微波设备类型：NARROW BAND MEDIUM POWER
子类别：RF/Microwave Amplifiers表面贴装：YES
端子面层：Matte Tin (Sn)Base Number Matches：1

SST12LP00-QV6E 数据手册

 浏览型号SST12LP00-QV6E的Datasheet PDF文件第2页浏览型号SST12LP00-QV6E的Datasheet PDF文件第3页浏览型号SST12LP00-QV6E的Datasheet PDF文件第4页浏览型号SST12LP00-QV6E的Datasheet PDF文件第5页浏览型号SST12LP00-QV6E的Datasheet PDF文件第6页浏览型号SST12LP00-QV6E的Datasheet PDF文件第7页 
2.4-2.5 GHz Power Amplifier  
SST12LP00  
SST12LP002.4 GHz Power Amplifier  
Preliminary Specifications  
FEATURES:  
APPLICATIONS:  
•
High Gain:  
•
•
•
Bluetooth  
USB Dongles  
2.4 GHz Cordless phones  
– Typically 28 dB gain across 2.4– 2.5 GHz over  
temperatures 0– 85°C  
High linear output power:  
– >24 dBm P1dB  
High power-added efficiency/low operating cur-  
rent for Bluetooth applications  
•
•
– ~50% PAE or 115 mA total current consumption  
@ Pout = 23 dBm for Vcc = 3.3V and GCTL =  
3.0V  
•
Low idle current  
– ~10 mA ICQ  
•
•
Simple input/output matching  
Packages available  
– 6-contact VQFN and UQFN (3 x 1.6mm2)  
PRODUCT DESCRIPTION  
The SST12LP00 is a high-power and high-gain power  
amplifier based on the highly reliable InGaP/GaAs  
HBT technology. SST12LP00 is easily configured for  
high-power and high-efficiency applications while  
operating over the 2.4- 2.5 GHz frequency band. This  
device typically provides 30 dB gain with better than  
50% power added efficiency @ Pout = 23 dBm.  
The SST12LP00’s excellent linearity is well suited for  
Class 1 Bluetooth operation. The power amplifier IC  
also features easy board-level usage along with high  
speed power up/down control. A low reference current  
makes SST12LP00 ideal for the final stage power  
amplification in battery-powered Bluetooth, USB Don-  
gle, or cordless phone transmitter applications.  
The SST12LP00 is offered in both 6-contact VQFN  
and UQFN packages. See Figure 2 for pin assign-  
ments and Table 1 for pin descriptions.  
©2006 SST Communications Corp.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71283-01-000  
1
3/06  
 
 
1234567...14

中文翻译

下载PDF

与SST12LP00-QV6E相关器件

型号 品牌 获取价格 描述 数据表
SST12LP00-QV6E-K SST

获取价格

 		2.4-2.5 GHz Power Amplifier
SST12LP00-QV6F SST

获取价格

 		2.4-2.5 GHz Power Amplifier
SST12LP07 SST

获取价格

 		2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A-QXBE MICROCHIP

获取价格

 		2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07-QVCE SST

获取价格

 		2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07-QVCE-K SST

获取价格

 		2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08 SST

获取价格

 		2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08-QX6E MICROCHIP

获取价格

 		SST12LP08-QX6E
SST12LP08-QXBE MICROCHIP

获取价格

 		2412 MHz - 2484 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2 X 2 MM, ROHS COMPLI
SST12LP08-QXBE SILICON

获取价格

 		Narrow Band Medium Power Amplifier, 2412MHz Min, 2484MHz Max, 2 X 2 MM, ROHS COMPLIANT, MO

与SST12LP00-QV6E相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证