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SST12LP00-QV6E PDF预览

SST12LP00-QV6E

更新时间: 2024-11-08 03:39:27
品牌 Logo 应用领域
SST 放大器射频微波功率放大器
页数 文件大小 规格书
14页 489K
描述
2.4-2.5 GHz Power Amplifier

SST12LP00-QV6E 数据手册

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2.4-2.5 GHz Power Amplifier  
SST12LP00  
SST12LP002.4 GHz Power Amplifier  
Preliminary Specifications  
FEATURES:  
APPLICATIONS:  
High Gain:  
Bluetooth  
USB Dongles  
2.4 GHz Cordless phones  
Typically 28 dB gain across 2.4– 2.5 GHz over  
temperatures 0– 85°C  
High linear output power:  
– >24 dBm P1dB  
High power-added efficiency/low operating cur-  
rent for Bluetooth applications  
– ~50% PAE or 115 mA total current consumption  
@ Pout = 23 dBm for Vcc = 3.3V and GCTL =  
3.0V  
Low idle current  
– ~10 mA ICQ  
Simple input/output matching  
Packages available  
– 6-contact VQFN and UQFN (3 x 1.6mm2)  
PRODUCT DESCRIPTION  
The SST12LP00 is a high-power and high-gain power  
amplifier based on the highly reliable InGaP/GaAs  
HBT technology. SST12LP00 is easily configured for  
high-power and high-efficiency applications while  
operating over the 2.4- 2.5 GHz frequency band. This  
device typically provides 30 dB gain with better than  
50% power added efficiency @ Pout = 23 dBm.  
The SST12LP00’s excellent linearity is well suited for  
Class 1 Bluetooth operation. The power amplifier IC  
also features easy board-level usage along with high  
speed power up/down control. A low reference current  
makes SST12LP00 ideal for the final stage power  
amplification in battery-powered Bluetooth, USB Don-  
gle, or cordless phone transmitter applications.  
The SST12LP00 is offered in both 6-contact VQFN  
and UQFN packages. See Figure 2 for pin assign-  
ments and Table 1 for pin descriptions.  
©2006 SST Communications Corp.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71283-01-000  
1
3/06  

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