Datasheet > SST12LP00-QU6F-K

SST12LP00-QU6F-K

更新时间： 2024-09-20 03:24:55

品牌	Logo	应用领域
SST		放大器功率放大器
页数	文件大小	规格书
14页	489K
描述
2.4-2.5 GHz Power Amplifier

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SST12LP00-QU6F-K 数据手册

2.4-2.5 GHz Power Amplifier

SST12LP00

SST12LP002.4 GHz Power Amplifier

Preliminary Specifications

FEATURES:

APPLICATIONS:

•

High Gain:

•

Bluetooth

USB Dongles

2.4 GHz Cordless phones

– Typically 28 dB gain across 2.4– 2.5 GHz over

temperatures 0– 85°C

High linear output power:

– >24 dBm P1dB

High power-added efficiency/low operating cur-

rent for Bluetooth applications

•

– ~50% PAE or 115 mA total current consumption

@ Pout = 23 dBm for V_cc= 3.3V and GCTL =

3.0V

•

Low idle current

– ~10 mA I_CQ

•

Simple input/output matching

Packages available

– 6-contact VQFN and UQFN (3 x 1.6mm²)

PRODUCT DESCRIPTION

The SST12LP00 is a high-power and high-gain power

amplifier based on the highly reliable InGaP/GaAs

HBT technology. SST12LP00 is easily configured for

high-power and high-efficiency applications while

operating over the 2.4- 2.5 GHz frequency band. This

device typically provides 30 dB gain with better than

50% power added efficiency @ P_out= 23 dBm.

The SST12LP00’s excellent linearity is well suited for

Class 1 Bluetooth operation. The power amplifier IC

also features easy board-level usage along with high

speed power up/down control. A low reference current

makes SST12LP00 ideal for the final stage power

amplification in battery-powered Bluetooth, USB Don-

gle, or cordless phone transmitter applications.

The SST12LP00 is offered in both 6-contact VQFN

and UQFN packages. See Figure 2 for pin assign-

ments and Table 1 for pin descriptions.

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

S71283-01-000

3/06

12 3 4 5 6 7...14

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