Datasheet > SST12LN01

SST12LN01

更新时间： 2024-09-20 02:57:15

品牌	Logo	应用领域
SST		放大器射频微波
页数	文件大小	规格书
11页	289K
描述
2.4-2.5 GHz Low-Noise Amplifier

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SST12LN01 数据手册

2.4-2.5 GHz Low-Noise Amplifier

SST12LN01

SST12L012.4-2.5 GHz Low-Noise Amplifier

Preliminary Specifications

FEATURES:

APPLICATIONS:

•

Suitable Gain:

– Typically 12-13 dB gain across 2.4–2.5 GHz

Low Noise Figure:

– 1.2-1.5 dB across 2.4–2.5 GHz

IIP3:

– 3 dBm across 2.4–2.5 GHz

Low Current Consumption

– 12 mA across 2.4–2.5 GHz

50Ω Input/Output Matched

Packages available

•

WLAN

Bluetooth

Wireless Network

•

– 16-contact UQFN – 3 mm x 1.6 mm

All non-Pb (lead-free) devices are RoHS compliant

•

PRODUCT DESCRIPTION

The SST12LN01 is a cost effective Low Noise Amplifier

(LNA) which does not require external RF-matching com-

ponents on PCB applications. This device is based on the

0.5µm GaAs PHEMT technology, and complies with

802.11 b/g applications.

SST12LN01 provides high-performance, low-noise, and

mild-gain operations within the 2.4–2.5 GHz frequency

band. Across this frequency band, this device typically pro-

vides 12-13 dB gain.

This LNA cell is equipped with a self DC-biasing scheme,

which helps keep the DC consumption very low during

operation. A pair of singled-ended, input and output ports is

assigned to the LNA cell with a 50 RF match.

The SST12LN01 is offered in a 6-contact UQFN package.

See Figure 2 for pin assignments and Table 1 for pin

descriptions.

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

S71329-00-000

9/06

12 3 4 5 6 7...11

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