Datasheet > SST12LN01-QU6E-K

SST12LN01-QU6E-K

更新时间： 2024-11-09 01:16:51

品牌	Logo	应用领域
美国微芯 - MICROCHIP		局域网 WLAN 无线局域网
页数	文件大小	规格书
12页	227K
描述
2.4-2.5 GHz WLAN Low-Noise Amplifier

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SST12LN01-QU6E-K 数据手册

SST12LN01

2.4-2.5 GHz WLAN Low-Noise Amplifier

Features

1.0

PRODUCT DESCRIPTION

• Gain:

SST12LN01 is a cost effective Low-Noise Amplifier

(LNA) which requires no external RF-matching compo-

nents. This device is based on the GaAs pHEMT tech-

nology, and complies with 802.11 b/g applications.

– Typically 13.5 dB gain across 2.4–2.5 GHz

• Noise Figure:

– Typically 1.5 dB across 2.4–2.5 GHz

• P1dB:

– Typically -5dBm with V_DD3.3V

• Low-Current Consumption

– 10 mA across 2.4–2.5 GHz

• 50 Input/Output Matched

• Packages available

SST12LN01 provides high-performance, low-noise,

and moderate-gain operation within the 2.4–2.5 GHz

frequency band. Across this frequency band, the LNA

typically provides 13.5 dB gain and 1.5 dB noise figure.

This LNA cell is designed with a self DC-biasing

scheme, which maintains low DC current consumption,

nominally at 10 mA, during operation. Optimum perfor-

mance is achieved with only a single power supply, and

no external bias resistors or networks are required. The

input and output ports are single-ended 50 matched.

RF ports are also DC isolated requiring no DC blocking

capacitors or matching components.

– 6-contact UQFN – 3 mm x 1.6 mm

• All non-Pb (lead-free) devices are RoHS

compliant

Applications

SST12LN01 is offered in a 6-contact UQFN package.

See Figure 3-1 for pin assignments and Table 4-1 for

pin descriptions.

• WLAN

• Bluetooth

• Wireless Network

 2015 Microchip Technology Inc.

DS70005150A-page 1

12 3 4 5 6 7...12

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