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SST12LF02-QXCE PDF预览

SST12LF02-QXCE

更新时间： 2024-09-20 12:02:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 电信集成电路电信电路电话
页数 文件大小 规格书
2页 239K
描述
2.4 GHz High-Gain, High-Efficiency Front-end Module Cordless phones

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SST12LF02-QXCE 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：HVQCCN,Reach Compliance Code：compliant
HTS代码：8542.39.00.01风险等级：8.58
Is Samacsys：NJESD-30 代码：S-XQCC-N16
JESD-609代码：e3长度：3 mm
功能数量：1端子数量：16
最高工作温度：85 °C最低工作温度：-20 °C
封装主体材料：UNSPECIFIED封装代码：HVQCCN
封装形状：SQUARE封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：260座面最大高度：0.5 mm
标称供电电压：3.3 V表面贴装：YES
电信集成电路类型：TELECOM CIRCUIT温度等级：OTHER
端子面层：MATTE TIN端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
处于峰值回流温度下的最长时间：40宽度：3 mm
Base Number Matches：1

SST12LF02-QXCE 数据手册

 浏览型号SST12LF02-QXCE的Datasheet PDF文件第2页 
2.4 GHz High-Gain, High-Efficiency Front-end Module  
SST12LF02  
A Microchip Technology Company  
Product Brief  
The SST12LF02 is a 2.4 GHz Front-End Module (FEM) that combines a high-perfor-  
mance Power Amplifier (PA) and a switch within a compact, fully-matched package.  
Designed in compliance with IEEE 802.11b/g/n applications and based on GaAs  
PHEMT/HBT technology, the SST12LF02 operates within the frequency range of 2.4-  
2.5 GHz with very low DC-current consumption. The Transmitter chain has excellent  
linearity, typically <3% added EVM up to 18 dBm output power, with 802.11g 54 Mbps  
OFDM operation while meeting 802.11b/g/n spectrum mask at 21 dBm. An option to  
simultaneously connect the WLAN and Bluetooth receiver ports is available. The  
SST12LF02 is offered in a 16-contact XQFN package.  
Features  
Block Diagram  
• High Gain:  
– Typically 29 dB gain across 2.4–2.5 GHz over tempera-  
ture -20°C to +85°C for Transmitter (TX) chain.  
Bluetooth  
• High linear output power (at 3.3V):  
Rx_out  
Antenna  
SP3T  
Switch  
– Meets 802.11g OFDM ACPR requirement up to 21 dBm  
– <3% added EVM up to 18 dBm for  
54 Mbps 802.11g signal  
– Meets 802.11b ACPR requirement up to 21 dBm  
Tx_in  
• High power-added efficiency/Low operating cur-  
rent for 802.11b/g/n applications  
Tx Input  
Match  
PA  
• High temperature stability  
Bias  
Circuit  
– ~1 dB power variation between -20°C to +85°C  
– ~3 dB gain variation between -20°C to +85°C  
• Temperature and load insensitive on-chip power detector  
Vccb  
Vref Vcc  
Vdet  
– 20 dB dynamic range  
• Low insertion loss  
– 0.5 dB for WLAN receiver and Bluetooth ports  
– 4.5 dB and 3.8 dB for simultaneous WLAN and Blue-  
tooth receiver ports, respectively  
Product Ordering  
• Input/output ports matched to 50internally and  
DC decoupled.  
Valid combinations for SST12LF02  
SST12LF02-QXCE  
• Packages available  
– 16-contact XQFN – 3mm x 3mm x 0.45mm  
SST12LF02 Evaluation Kits  
• All non-Pb (lead-free) devices are RoHS compliant  
SST12LF02-QXCE-K  
Applications  
• WLAN (IEEE 802.11b/g/n)  
Note: Valid combinations are those products in mass produc-  
tion or will be in mass production. Consult your SST sales  
representative to confirm availability of valid combinations  
and to determine availability of new combinations.  
• Bluetooth™  
• Home RF  
• Cordless phones  
• 2.4 GHz ISM wireless equipment  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS75006B  
06/11  
12

中文翻译

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