SSM3K16FS

更新时间： 2024-01-28 19:26:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	144K
描述
Silicon N Channel MOS Type High Speed Switching Applications

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SSM3K16FS 数据手册

SSM3K16FS

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K16FS

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

Suitable for high-density mounting due to compact package

Low on resistance: R = 3.0 Ω (max) (@V

= 4 V)

: R = 4.0 Ω (max) (@V

= 2.5 V)

: R = 15 Ω (max) (@V

= 1.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±10

Gate-Source voltage

GSS

100

Drain current

Pulse

200

Drain power dissipation (Ta = 25°C)

Channel temperature

100

°C

stg

150

JEDEC

JEITA

―

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2H1B

Weight: 2.4 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Internal connections

D S

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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