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SSM3K16FS PDF预览

SSM3K16FS

更新时间: 2024-11-11 04:02:43
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 144K
描述
Silicon N Channel MOS Type High Speed Switching Applications

SSM3K16FS 数据手册

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SSM3K16FS  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K16FS  
High Speed Switching Applications  
Unit: mm  
Analog Switch Applications  
Suitable for high-density mounting due to compact package  
Low on resistance: R = 3.0 (max) (@V  
= 4 V)  
on  
GS  
GS  
: R = 4.0 (max) (@V  
= 2.5 V)  
on  
: R = 15 (max) (@V  
= 1.5 V)  
on  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
20  
±10  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
200  
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
100  
mW  
°C  
D
ch  
stg  
T
150  
JEDEC  
JEITA  
Storage temperature range  
T
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2H1B  
Weight: 2.4 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
Internal connections  
3
3
D S  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  

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