Datasheet > SSM3K310T

SSM3K310T

更新时间： 2024-01-15 02:24:16

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	164K
描述
High-Speed Switching Applications

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中文翻译

获取价格

数据手册

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SSM3K310T 数据手册

SSM3K7002F

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

SSM3K7002F

High-Speed Switching Applications

Analog Switch Applications

Unit: mm

+0.5

2.5-0.3

•

Small package

Low ON-resistance : R = 3.3 Ω (max) (@V

+0.25

1.5-0.15

= 4.5 V)

= 5 V)

: R = 3.2 Ω (max) (@V

: R = 3.0 Ω (max) (@V

= 10 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Gate-source voltage

± 20

GSS

200

Drain current

1.Gate

Pulse

800

2.Source

3.Drain

Drain power dissipation (Ta = 25°C)

Channel temperature

200

°C

stg

S-MINI

150

Storage temperature range

−55 to 150

°C

JEDEC

JEITA

TO-236MOD

SC-59

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

⎯

Typ

Max

Unit

= ± 20 V, V = 0

⎯

± 10

⎯

μA

GSS

Drain-source breakdown voltage

Drain cutoff current

= 0.1 mA, V

= 0

⎯

(BR) DSS

= 60 V, V

= 0

⎯

μA

DSS

Gate threshold voltage

= 10 V, I = 0.25 mA

1.0

170

⎯

2.5

⎯

Forward transfer admittance

⎪Y ⎪

= 10 V, I = 200 mA

⎯

= 500 mA, V

= 10 V

= 5 V

2.0

2.1

2.2

1.4

5.8

2.4

3.0

3.2

3.3

⎯

Drain-source ON-resistance

= 100 mA, V

⎯

DS (ON)

= 4.5 V

⎯

Input capacitance

⎯

iss

= 25 V, V

= 0, f = 1 MHz

I = 200 mA ,

Reverse transfer capacitance

Output capacitance

⎯

rss

oss

(on)

(off)

⎯

4.0

Turn-on delay time

Turn-off delay time

= 30 V ,

= 0 to 10 V

Switching time

2007-11-01

12 3 4 5

中文翻译

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与SSM3K310T相关器件

型号	品牌	获取价格	描述	数据表
SSM3K310T(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,5A I(D),TO-236AB
SSM3K310T(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,5A I(D),TO-236AB
SSM3K315T	TOSHIBA	获取价格	High-Speed Switching Applications
SSM3K315T(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6A I(D),TO-236AA
SSM3K315T(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6A I(D),TO-236AA
SSM3K316T	TOSHIBA	获取价格	Fiwld Effect Transistor Silicon N Channel MOS Type
SSM3K316T(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,4A I(D),SOT-346VAR
SSM3K318R	TOSHIBA	获取价格	Small-Signal MOSFET (Single)
SSM3K318RLF(T	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
SSM3K318T	TOSHIBA	获取价格	Field-Effect Transistor Silicon N-Channel MOS

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