是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 2.5 A |
最大漏源导通电阻: | 0.107 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM3K318RLF(T | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor |
![]() |
SSM3K318T | TOSHIBA |
获取价格 |
Field-Effect Transistor Silicon N-Channel MOS |
![]() |
SSM3K318T(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),SOT-346VAR |
![]() |
SSM3K320T | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors |
![]() |
SSM3K324R | TOSHIBA |
获取价格 |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal |
![]() |
SSM3K329R | TOSHIBA |
获取价格 |
Field-Effect Transistor Silicon N-Channel MOS Type |
![]() |
SSM3K329R,LF | TOSHIBA |
获取价格 |
MOSFET, SOT23F |
![]() |
SSM3K329R,LF(A | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |
![]() |
SSM3K329R,LNKEMF(A | TOSHIBA |
获取价格 |
暂无描述 |
![]() |
SSM3K333R | UTC |
获取价格 |
6A, 30V N-CHANNEL POWER MOSFET |
![]() |