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SSM3K333R,LF PDF预览

SSM3K333R,LF

更新时间: 2024-11-30 15:52:55
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 227K
描述
MOSFET, SOT23F

SSM3K333R,LF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3Reach Compliance Code:unknown
风险等级:1.71配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):6 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM3K333R,LF 数据手册

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SSM3K333R  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H)  
SSM3K333R  
Power Management Switch Applications  
High-Speed Switching Applications  
Unit: mm  
+0.08  
-0.05  
0.42  
+0.08  
0.17  
0.05ꢀM A  
-0.07  
3
4.5V drive  
Low ON-resistance: R  
= 42 m(max) (@V  
= 4.5 V)  
= 10 V)  
DS(ON)  
DS(ON)  
GS  
: R  
= 28 m(max) (@V  
GS  
1
2
0.95  
0.95  
Absolute Maximum Ratings (Ta = 25°C)  
2.9±0.2  
A
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
V
V
DSS  
V
±20  
Gate-source voltage  
GSS  
I
(Note1)  
6
DC  
D
1. Gate  
2. Source  
3. Drain  
Drain current  
A
I
(Note1)  
(Note 2)  
12  
Pulse  
DP  
P
1
2
D
Power dissipation  
W
SOT-23F  
t = 10s  
ch  
JEDEC  
T
T
150  
°C  
°C  
Channel temperature  
55 to 150  
Storage temperature range  
JEITA  
stg  
TOSHIBA  
2-3Z1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 11 mg (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: The channel temperature should not exceed 150°C during use.  
Note 2: Mounted on a FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Marking  
Equivalent Circuit (top view)  
3
3
KFK  
1
2
1
2
Start of commercial production  
2010-10  
1
2014-03-01  

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