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SSM3K37FS PDF预览

SSM3K37FS

更新时间: 2024-11-01 20:05:11
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 173K
描述
TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal

SSM3K37FS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.64
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:20 V
最大漏极电流 (ID):0.2 A最大漏源导通电阻:2.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM3K37FS 数据手册

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SSM3K37FS  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K37FS  
High Speed Switching Applications  
Analog Switch Applications  
Unit: mm  
1.5Vdrive  
Low ON-resistance  
R
R
R
R
= 5.60 (max) (@V  
= 4.05 (max) (@V  
= 3.02 (max) (@V  
= 2.20 (max) (@V  
= 1.5 V)  
= 1.8 V)  
= 2.5 V)  
= 4.5 V)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
V
20  
± 10  
V
V
DSS  
Gate-Source voltage  
GSS  
1. Gate  
DC  
I
200  
D
Drain current  
mA  
2. Source  
3. Drain  
Pulse  
I
400  
DP  
Power dissipation  
P
100  
mW  
°C  
SSM  
D
Channel temperature  
Storage temperature range  
T
150  
ch  
stg  
JEDEC  
JEITA  
T
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-2H1B  
Weight: 2.4mg(typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
Equivalent Circuit (Top View)  
3
3
SU  
1
2
1
2
1
2010-08-31  

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