SSM3K7002FU(LSAN,F

更新时间： 2024-01-20 03:15:58

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
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5页	220K
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SSM3K7002FU(LSAN,F 数据手册

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SSM3K7002BFU

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

SSM3K7002BFU

High-Speed Switching Applications

Analog Switch Applications

Unit: mm

•

Small package

Low ON-resistance : R

= 3.3 Ω (max) (@V

= 2.6 Ω (max) (@V

= 2.1 Ω (max) (@V

= 4.5 V)

= 5 V)

DS(ON)

: R

= 10 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Gate-source voltage

± 20

200

800

150

GSS

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

°C

Storage temperature range

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

SC-70

2-2E1E

TOSHIBA

Weight: 6.0 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6mm²× 3)

0.6 mm

1.0 mm

Marking

Equivalent Circuit (top view)

2009-11-26

12 3 4 5

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