Datasheet > SSM4228GM

SSM4228GM

更新时间： 2024-11-05 06:14:07

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
6页	148K
描述
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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中文翻译

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数据手册

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SSM4228GM 数据手册

SSM4228M/GM

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Low on-resistance

High Vgs rating

BV_DSS

R_DS(ON)

I_D

30V

25mΩ

6.8A

Surface-mount package

SO-8

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

This device is available with Pb-free lead finish (second-level interconnect) as SSM4228GM.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 25

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,4

6.8

5.5

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient

Max.

°C/W

4/26/2004 Rev.2.10

www.SiliconStandard.com

1 of 6

12 3 4 5 6

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