Datasheet > SSM4232GM

SSM4232GM

更新时间： 2024-11-05 06:14:15

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描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM4232GM 数据手册

SSM4232GM

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

BV_DSS

R_DS(ON)

I_D

30V

22mΩ

7.8A

Low On-Resistance

Simple Drive Requirement

Dual N MOSFET Package

SO-8

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast

switching, ruggedized device design, ultra low on-resistance

and cost-effectiveness.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

±20

7.8

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

6.2

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

62.5

Unit

Rthj-a

Max.

℃/W

09/23/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5

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