Datasheet > SSM40T03GS

SSM40T03GS

更新时间： 2022-12-20 03:42:48

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描述
N-channel Enhancement-mode Power MOSFET

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SSM40T03GS 数据手册

SSM40T03GP,S

N-channel Enhancement-mode Power MOSFET

Low gate-charge

BV_DSS

R_DS(ON)

I_D

30V

Simple drive requirement

Fast switching

25mΩ

28A

Pb-free, RoHS compliant.

DESCRIPTION

The SSM40T03GS is in a TO-263 package, which is widely used for

commercial and industrial surface-mount applications. This device is

suitable for low-voltage applications such as DC/DC converters.

The through-hole version, the SSM40T03GP in TO-220, is available for

vertical-mounting, where a small footprint is required on the board, and/or

an external heatsink is to be attached.

TO-263 (S)

TO-220(P)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

±25

Continuous Drain Current

I_D@ T_C=25°C

I_D@ T_C=100°C

I_DM

Continuous Drain Current

Pulsed Drain Current¹

Total Power Dissipation

Linear Derating Factor

P_D@ T_C=25°C

0.25

W/°C

T_STG

T_J

Storage Temperature Range

-55 to 150

°C

Operating Junction Temperature Range

THERMAL DATA

Symbol

Parameter

Value

Units

°C/W

ΘJC

Maximum Thermal Resistance Junction-case

Maximum Thermal Resistance Junction-ambient

ΘJA

9/16/2005 Rev.3.1

www.SiliconStandard.com

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