Datasheet > SSM4226M

SSM4226M

更新时间： 2024-11-26 21:55:19

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描述
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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数据手册

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SSM4226M 数据手册

SSM4226M/GM

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low on-resistance

Simple drive requirement

High V_GSrating

BV_DSS

R _DS(ON)

I_D

30V

18mΩ

8.2A

SO-8

Description

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

8.2

6.7

P_D@ T_A=25°C

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

°C/W

8/06/2004 Rev.1.02

www.SiliconStandard.com

1 of 4

12 3 4

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