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SSM4224M PDF预览

SSM4224M

更新时间: 2024-11-05 06:14:07
品牌 Logo 应用领域
SSC /
页数 文件大小 规格书
4页 130K
描述
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM4224M 数据手册

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SSM4224M  
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET  
Low on-resistance  
BVDSS  
R DS(ON)  
ID  
30V  
14m  
10A  
D2  
D2  
Simple drive requirement  
Dual N-MOSFET package  
D1  
D1  
G2  
S2  
G1  
SO-8  
S1  
Description  
Advanced power MOSFETs from Silicon Standard provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
D2  
S2  
D1  
S1  
G2  
G1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
30  
Gate-Source Voltage  
±20  
V
ID @ TA=25°C  
ID @ TA=70°C  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
10  
A
8
30  
A
A
PD @ TA=25°C  
Total Power Dissipation  
2
W
Linear Derating Factor  
0.016  
-55 to 150  
-55 to 150  
W/°C  
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
°C/W  
Rev.1.01 4/06/2004  
www.SiliconStandard.com  
1 of 4  

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