SSM40P03GH,J
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
D
Low gate-charge
BVDSS
R DS(ON)
ID
-30V
28mW
-30A
Simple drive requirement
Fast switching
G
S
Description
G
The SSM40P03H is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM40P03J in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
D
S
TO-252 (H)
TO-251 (J)
G
D
S
Pb-free lead finish (second-level interconnect)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
-30
±20
Gate-Source Voltage
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID @ TC=25°C
ID @ TC=100°C
IDM
-30
A
-18
A
-120
A
PD @ TC=25°C
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/°C
°C
°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
°C/W
°C/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
4.0
Rthj-a
110
2/16/2005 Rev.2.2
www.SiliconStandard.com
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