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SSM40P03GJ PDF预览

SSM40P03GJ

更新时间: 2022-12-20 03:42:48
品牌 Logo 应用领域
SSC /
页数 文件大小 规格书
5页 265K
描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM40P03GJ 数据手册

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SSM40P03GH,J  
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET  
D
Low gate-charge  
BVDSS  
R DS(ON)  
ID  
-30V  
28mW  
-30A  
Simple drive requirement  
Fast switching  
G
S
Description  
G
The SSM40P03H is in a TO-252 package, which is widely used for  
commercial and industrial surface mount applications, and is well suited  
for low voltage applications such as DC/DC converters. The through-hole  
version, the SSM40P03J in TO-251, is available for low-footprint vertical  
mounting. These devices are manufactured with an advanced process,  
providing improved on-resistance and switching performance.  
D
S
TO-252 (H)  
TO-251 (J)  
G
D
S
Pb-free lead finish (second-level interconnect)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
-30  
±20  
Gate-Source Voltage  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID @ TC=25°C  
ID @ TC=100°C  
IDM  
-30  
A
-18  
A
-120  
A
PD @ TC=25°C  
Total Power Dissipation  
31.3  
W
Linear Derating Factor  
0.25  
W/°C  
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
°C/W  
°C/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
4.0  
Rthj-a  
110  
2/16/2005 Rev.2.2  
www.SiliconStandard.com  
1 of 5  

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