Datasheet > SSM40P03GJ

SSM40P03GJ

更新时间： 2022-12-20 03:42:48

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	265K
描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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数据手册

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SSM40P03GJ 数据手册

SSM40P03GH,J

f=1.0MHz

10000

V _DS=- 24 V

_D=-1 8 A

1000

C _iss

C _oss

C _rss

100

-V _DS, Drain-to-Source Voltage (V)

Q _G, Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000.0

Duty factor=0.5

100.0

10.0

1.0

100us

1ms

0.2

0.1

0.05

10ms

P_DM

0.02

100ms

T _c=25 ^oC

0.01

Duty factor = t/T

Single Pulse

Peak T_j= P_DMx R_thjc+ T_C

0.1

0.01

0.00001

0.1

100

0.0001

0.001

0.01

0.1

-V _DS, Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

V_DS

V_G

90%

Q_G

-4.5V

Q_GD

Q_GS

10%

V_GS

t_r

t_d(on)

t_d(off)t_f

Charge

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

2/16/2005 Rev.2.2

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