Datasheet > SSM40N03P

SSM40N03P

更新时间： 2024-02-12 18:39:37

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描述
N CHANNEL ENHANCEMENT MODE POWER MOSFET

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技术参数
数据手册

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SSM40N03P 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

SSM40N03P 数据手册

SSM40N03P

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low gate charge

BV_DSS

R _DS(ON)

I_D

30V

17mΩ

40A

Simple drive requirement

Fast switching

TO-220

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial and

industrial applications and suited for low voltage applications such as

DC/DC converters and high efficiency switching circuits.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

I_D@ T_C=25°C

I_D@ T_C=100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

169

P_D@ T_C=25°C

Total Power Dissipation

Linear Derating Factor

0.4

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

2.5

°C/W

Rthj-a

Rev.2.01 7/01/2004

www.SiliconStandard.com

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