Datasheet > SSM3K7002KFU

SSM3K7002KFU

更新时间： 2023-12-20 18:45:09

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	226K
描述
N-ch MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-323(USM)

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SSM3K7002KFU 数据手册

SSM3K7002KFU

MOSFETs Silicon N-Channel MOS

SSM3K7002KFU

1. Applications

•

High-Speed Switching

2. Features

(1) AEC-Q101 qualified (Please see the orderable part number list)

(2) Low drain-source on-resistance

: RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)

RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)

RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

3. Packaging and Internal Circuit

1: Gate

2: Source

3: Drain

USM

4. Orderable part number

Orderable part number

AEC-Q101

Note

SSM3K7002KFU,LF

SSM3K7002KFU,LXG

SSM3K7002KFU,LXH

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General Use

YES

(Note 1)

Unintended Use

Automotive Use

(Note 1)

Note 1: For more information, please contact our sales or use the inquiry form on our website.

Start of commercial production

2016-01

2021-05-28

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7 8

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