Datasheet > SSM3K7002FU,LF(T

SSM3K7002FU,LF(T

更新时间： 2024-01-31 18:40:24

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	181K
描述
Small Signal Field-Effect Transistor

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技术参数
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SSM3K7002FU,LF(T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.62
Base Number Matches：	1

SSM3K7002FU,LF(T 数据手册

SSM3K7002FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K7002FU

High Speed Switching Applications

Analog Switch Applications

Unit: mm

•

Small package

2.1± 0.1

Low ON resistance : R = 3.3 Ω (max) (@V

= 4.5 V)

= 5 V)

: R = 3.2 Ω (max) (@V

1.25 ± 0.1

: R = 3.0 Ω (max) (@V

= 10 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

Gate-Source voltage

± 20

GSS

200

Drain current

800

Pulse

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

150

°C

150

1. GATE

Storage temperature range

−55 to 150

°C

stg

2. SOURCE

3. DRAIN

USM

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

⎯

SC-70

2-2E1E

TOSHIBA

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6mm²× 3)

0.6 mm

1.0 mm

Marking

Equivalent Circuit

(top view)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

Start of commercial production

2002-11

2014-03-01

12 3 4 5

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