Datasheet > SSM3K7002BF

SSM3K7002BF

更新时间： 2024-09-30 14:56:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	218K
描述
EOL announced

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中文翻译

获取价格

数据手册

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SSM3K7002BF 数据手册

SSM3K7002BF

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

SSM3K7002BF

High-Speed Switching Applications

Analog Switch Applications

Unit: mm

•

Small package

+0.5

2.5-0.3

Low ON-resistance : R

= 3.3 Ω (max) (@V

= 2.6 Ω (max) (@V

= 2.1 Ω (max) (@V

= 4.5 V)

= 5 V)

DS(ON)

+0.25

1.5-0.15

: R

= 10 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Gate-source voltage

±20

200

800

200

150

GSS

Drain current

Pulse

Drain power dissipation

Channel temperature

°C

stg

1.Gate

2.Source

3.Drain

S-MINI

Storage temperature range

−55 to 150

°C

JEDEC

JEITA

TO-236MOD

SC-59

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-3F1F

Weight: 12 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

= ± 20 V, V = 0 V

Min

Typ

Max

Unit

⎯

±10

⎯

μA

GSS

= 10 mA, V

= 0 V

(BR) DSS

(BR) DSX

Drain-source breakdown voltage

= 10 mA, V

= -10 V

= 0 V

⎯

Drain cutoff current

= 60 V, V

⎯

μA

DSS

Gate threshold voltage

Forward transfer admittance

= 10 V, I = 0.25 mA

1.5

225

⎯

3.1

⎯

⎪Y ⎪

= 10 V, I = 200 mA

(Note 1)

⎯

= 500 mA, V

= 10 V

= 5 V

1.62

1.90

2.10

17.0

1.9

3.6

3.3

14.5

-0.84

2.1

2.6

3.3

⎯

Drain-source ON-resistance

= 100 mA, V

⎯

DS (ON)

= 4.5 V

⎯

Input capacitance

⎯

iss

= 25 V, V

= 0 V, f = 1 MHz

Reverse transfer capacitance

Output capacitance

⎯

rss

oss

⎯

Turn-on delay time

Turn-off delay time

⎯

6.6

-1.2

(on)

(off)

DSF

= 30 V, I = 200 mA ,

Switching time

= 0 to 10 V

⎯

Drain-source forward voltage

Note1: Pulse test

= -200 mA, V

= 0 V

(Note 1)

⎯

Start of commercial production

2009-08

2014-03-01

12 3 4 5

中文翻译

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与SSM3K7002BF相关器件

型号	品牌	获取价格	描述	数据表
SSM3K7002BFS	TOSHIBA	获取价格	EOL announced
SSM3K7002BFU	TOSHIBA	获取价格	High-Speed Switching Applications Analog Switch Applications
SSM3K7002CFU	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 0.17 A, 3.9 Ω@10V, SOT-323
SSM3K7002F	TOSHIBA	获取价格	High-Speed Switching Applications
SSM3K7002F(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),SC-59
SSM3K7002F_05	TOSHIBA	获取价格	High-Speed Switching Applications
SSM3K7002FU	TOSHIBA	获取价格	High Speed Switching Applications
SSM3K7002FU(LMAA,F	TOSHIBA	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
SSM3K7002FU(LSAN,F	TOSHIBA	获取价格	暂无描述
SSM3K7002FU(T5LIMF	TOSHIBA	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal

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