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SSM3K7002BFU PDF预览

SSM3K7002BFU

更新时间: 2024-02-05 17:17:34
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 220K
描述
High-Speed Switching Applications Analog Switch Applications

SSM3K7002BFU 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.62
Base Number Matches:1

SSM3K7002BFU 数据手册

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SSM3K7002BFU  
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS)  
SSM3K7002BFU  
High-Speed Switching Applications  
Analog Switch Applications  
Unit: mm  
Small package  
Low ON-resistance : R  
= 3.3 Ω (max) (@V  
= 2.6 Ω (max) (@V  
= 2.1 Ω (max) (@V  
= 4.5 V)  
= 5 V)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
: R  
: R  
= 10 V)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
V
60  
DSS  
Gate-source voltage  
± 20  
200  
800  
150  
150  
V
GSS  
DC  
I
D
Drain current  
mA  
Pulse  
I
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note 1)  
mW  
°C  
D
T
ch  
Storage temperature range  
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
SC-70  
2-2E1E  
TOSHIBA  
Weight: 6.0 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6mm2 × 3)  
0.6 mm  
1.0 mm  
Marking  
Equivalent Circuit (top view)  
3
3
NM  
1
2
1
2
1
2009-11-26  

SSM3K7002BFU 替代型号

型号 品牌 替代类型 描述 数据表
SI1330EDL-T1-GE3 VISHAY

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