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SSM3K56CT PDF预览

SSM3K56CT

更新时间: 2024-02-21 15:53:51
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 203K
描述
N-ch MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-883(CST3)

SSM3K56CT 数据手册

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SSM3K56CT  
MOSFETs Silicon N-Channel MOS  
SSM3K56CT  
1. Applications  
High-Speed Switching  
2. Features  
(1) 1.5-V gate drive voltage.  
(2) Low drain-source on-resistance  
: RDS(ON) = 235 m(max) (@VGS = 4.5 V)  
RDS(ON) = 300 m(max) (@VGS = 2.5 V)  
RDS(ON) = 480 m(max) (@VGS = 1.8 V)  
RDS(ON) = 840 m(max) (@VGS = 1.5 V)  
3. Packaging and Pin Configuration  
1.Gate  
2.Source  
3.Drain  
CST3  
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
20  
±8  
(Note 1)  
(Note 1),(Note 2)  
(Note 3)  
800  
mA  
IDP  
1600  
500  
PD  
mW  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Ensure that the channel temperature does not exceed 150.  
Note 2: Pulse width (PW) 10 ms, duty 1%  
Note 3: Mounted on an FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Start of commercial production  
2013-04  
2014-04-04  
Rev.3.0  
1

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