Datasheet > SSM3K56CT

SSM3K56CT

更新时间： 2024-11-02 14:56:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	203K
描述
N-ch MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-883(CST3)

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SSM3K56CT 数据手册

SSM3K56CT

MOSFETs Silicon N-Channel MOS

SSM3K56CT

1. Applications

•

High-Speed Switching

2. Features

(1) 1.5-V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V)

RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V)

3. Packaging and Pin Configuration

1.Gate

2.Source

3.Drain

CST3

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±8

(Note 1)

(Note 1),(Note 2)

(Note 3)

800

IDP

1600

500

Channel temperature

Storage temperature

Tch

150



Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%

Note 3: Mounted on an FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)

Start of commercial production

2013-04

2014-04-04

Rev.3.0

12 3 4 5 6 7 8

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