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SSM3K43FS PDF预览

SSM3K43FS

更新时间: 2023-12-06 20:13:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 232K
描述
Not Recommended for New Design

SSM3K43FS 数据手册

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SSM3K43FS  
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type  
SSM3K43FS  
High-Speed Switching Applications  
Unit: mm  
1.5-V drive  
Low ON-resistance : R = 1.52 (max) (@V  
= 1.5V)  
= 1.8V)  
= 2.5V)  
= 4.5V)  
= 5.0V)  
on  
GS  
GS  
GS  
GS  
GS  
: R = 1.14 (max) (@V  
on  
: R = 0.85 (max) (@V  
on  
: R = 0.66 (max) (@V  
on  
: R = 0.63 (max) (@V  
on  
Absolute Maximum Ratings (Ta = 25 °C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
± 10  
V
V
DSS  
Gate-source voltage  
GSS  
DC  
I
500  
D
Drain current  
mA  
Pulse  
I
1000  
150  
DP  
Drain power dissipation  
Channel temperature  
P
(Note1)  
mW  
°C  
D
T
150  
ch  
JEDEC  
JEITA  
Storage temperature range  
T
55 to 150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
TOSHIBA  
2-2H1B  
Weight: 2.4mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data  
(i.e. reliability test report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, 0.36 mm2 ×3)  
Marking  
Equivalent Circuit (top view)  
3
3
N S  
1
2
1
2
Start of commercial production  
2009-03  
1
2014-03-01  

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