SSM3K329R,LNKEMF(A

更新时间： 2024-01-16 15:24:25

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号场效应晶体管开关光电二极管
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SSM3K329R,LNKEMF(A 数据手册

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SSM3K329R

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM3K329R

○Power Management Switch Applications

○High-Speed Switching Applications

Unit: mm

+0.08

-0.05

0.42

+0.08

-0.07

0.17

0.05ꢀM A

•

1.8-V drive

Low ON-resistance: R

= 289 mΩ (max) (@V

= 1.8 V)

= 2.5 V)

= 4.0 V)

DS(ON)

: R

= 170 mΩ (max) (@V

= 126 mΩ (max) (@V

0.95

Absolute Maximum Ratings (Ta = 25°C)

2.9±0.2

Characteristic

Drain-source voltage

Symbol

Rating

Unit

DSS

Gate-source voltage

±12

GSS

1. Gate

2. Source

3. Drain

3.5

Drain current

Pulse

7.0

(Note 1)

SOT-23F

Power dissipation

t = 10s

JEDEC

―

Channel temperature

150

°C

JEITA

Storage temperature range

stg

−55 to 150

TOSHIBA

2-3Z1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 11 mg (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: Mounted on a FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

2010-06-10

12 3 4 5 6 7

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