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SSM3K310T(TE85L) PDF预览

SSM3K310T(TE85L)

更新时间： 2023-12-18 00:00:00
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 188K
描述
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,5A I(D),TO-236AB

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SSM3K310T(TE85L) 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.92配置：Single
最大漏极电流 (Abs) (ID)：5 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.7 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

SSM3K310T(TE85L) 数据手册

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SSM3K310T  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type  
SSM3K310T  
High-Speed Switching Applications  
•
•
1.5 V drive  
Unit: mm  
Low ON-resistance:  
R
R
= 66 mΩ (max) (@V  
= 43 mΩ (max) (@V  
= 1.5 V)  
= 1.8 V)  
on  
GS  
GS  
+0.2  
2.8-0.3  
on  
+0.2  
1.6-0.1  
R
on  
R
on  
= 32 mΩ (max) (@V  
= 28 mΩ (max) (@V  
= 2.5 V)  
= 4.0 V)  
GS  
GS  
１
Absolute Maximum Ratings (Ta = 25°C)  
２
３
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
20  
Unit  
V
V
V
DS  
Gate-Source voltage  
Drain current  
V
± 10  
5.0  
GSS  
DC  
I
D
A
Pulse  
I
10.0  
DP  
D (Note 1)  
Drain power dissipation  
Channel temperature  
P
700  
mW  
°C  
T
T
150  
ch  
Storage temperature range  
−55~150  
°C  
1.GATE  
stg  
2.SOURCE  
3.DRAIN  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TSM  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-3S1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board.  
Weight: 10 mg (typ.)  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= 1 mA, V  
= 1 mA, V  
= 0  
= −10 V  
20  
12  
⎯
⎯
0.35  
14  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
Drain cutoff current  
I
V
V
V
V
I
= 20 V, V  
= 0  
= 0  
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
= ±10 V, V  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
±1  
1.0  
⎯
28  
32  
43  
66  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
DS  
= 3 V, I = 1 mA  
V
th  
⏐Y ⏐  
D
= 3 V, I = 4.0 A  
(Note 2)  
(Note 2)  
(Note 2)  
(Note 2)  
(Note 2)  
28  
S
fs  
D
= 4.0 A, V  
= 3.0 A, V  
= 1.0 A, V  
= 0.5 A, V  
= 4.0 V  
= 2.5 V  
= 1.8 V  
= 1.5 V  
19  
D
GS  
GS  
GS  
GS  
I
I
I
23  
D
D
D
Drain-Source ON-resistance  
R
mΩ  
DS (ON)  
28  
33  
Input capacitance  
C
1120  
180  
160  
14.8  
11.4  
3.4  
21  
iss  
V
= 10 V, V  
= 0, f = 1 MHz  
GS  
pF  
nC  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
C
DS  
oss  
C
rss  
Q
g
V
V
= 10 V, I = 5.0 A  
DS  
DS  
GS  
Gate-Source Charge  
Gate-Drain Charge  
Q
gs  
= 4 V  
Q
gd  
Turn-on time  
Switching time  
t
V
V
= 10 V, I = 2.0 A,  
on  
DD  
GS  
D
ns  
V
= 0~2.5 V, R = 4.7 Ω  
Turn-off time  
t
G
36  
off  
Drain-Source forward voltage  
V
I
= −5.0 A, V = 0 V  
GS  
(Note 2)  
-0.85  
-1.2  
DSF  
D
Note 2: Pulse test  
1
2007-11-01  
123456

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