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SSM3K315T PDF预览

SSM3K315T

更新时间： 2024-02-08 03:58:21
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
6页 213K
描述
High-Speed Switching Applications

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中文翻译

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SSM3K315T 技术参数

生命周期：End Of Life包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.35Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.0276 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SSM3K315T 数据手册

 浏览型号SSM3K315T的Datasheet PDF文件第2页浏览型号SSM3K315T的Datasheet PDF文件第3页浏览型号SSM3K315T的Datasheet PDF文件第4页浏览型号SSM3K315T的Datasheet PDF文件第5页浏览型号SSM3K315T的Datasheet PDF文件第6页 
SSM3K315T  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)  
SSM3K315T  
○High-Speed Switching Applications  
Unit: mm  
•
•
4.5-V drive  
Low ON-resistance : R = 41.5 mΩ (max) (@V  
+0.2  
2.8-0.3  
= 4.5 V)  
= 10 V)  
on  
GS  
GS  
: R = 27.6 mΩ (max) (@V  
on  
+0.2  
1.6-0.1  
Absolute Maximum Ratings (Ta = 25°C)  
１
２
Characteristic  
Drain-Source voltage  
Symbol  
Rating  
30  
Unit  
V
３
V
V
DSS  
Gate-Source voltage  
±20  
V
GSS  
DC  
I
I
(Note 1)  
(Note 1)  
(Note 1)  
t = 10 s  
6.0  
D
Drain current  
A
Pulse  
12.0  
DP  
P
700  
D
Drain power dissipation  
mW  
1250  
150  
Channel temperature  
T
ch  
°C  
°C  
Storage temperature range  
T
stg  
−55 to 150  
1: Gate  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
2: Source  
3: Drain  
TSM  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba  
Semiconductor  
Reliability  
Handbook  
(“Handling  
TOSHIBA  
2-3S1A  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
Weight: 10 mg (typ.)  
Note 1: The junction temperature should not exceed 150°C during use.  
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= 10 mA, V  
= 10 mA, V  
= 0 V  
30  
15  
⎯
⎯
⎯
⎯
⎯
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
= -20 V  
= 0 V  
Drain cut-off current  
I
V
V
V
V
= 30 V, V  
⎯
1
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ± 20 V, V = 0 V  
DS  
⎯
⎯
±0.1  
2.5  
⎯
GSS  
V
= 5 V, I = 1 mA  
1.3  
11.5  
⎯
⎯
th  
D
⏐Y ⏐  
= 5 V, I = 4 A  
(Note 3)  
(Note 3)  
(Note 3)  
23.0  
20.5  
27.0  
450  
120  
77  
S
fs  
D
I
I
= 4.0 A, V  
= 2.0 A, V  
= 10 V  
= 4.5 V  
27.6  
41.5  
⎯
D
D
GS  
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
⎯
Input capacitance  
C
C
⎯
iss  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-on time  
V
= 15 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
⎯
⎯
DS  
oss  
C
rss  
⎯
⎯
Qg  
⎯
10.1  
7.6  
2.5  
21  
⎯
V
V
= 15 V, I =6.0 A  
D
DS  
GS  
nC  
Qgs  
Qgd  
⎯
⎯
= 10 V  
⎯
⎯
t
t
V
V
= 15 V, I = 2.0 A,  
⎯
⎯
on  
DD  
GS  
D
Switching time  
ns  
V
Turn-off time  
= 0 to 4.5 V, R = 10 Ω  
⎯
15  
⎯
G
off  
Drain-Source forward voltage  
Note 3: Pulse test  
V
I
= -6.0 A, V = 0 V  
GS  
(Note 3)  
⎯
-0.85  
-1.2  
DSF  
D
1
2008-11-04  
123456

中文翻译

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