生命周期: | End Of Life | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.35 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.0276 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM3K315T(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6A I(D),TO-236AA |
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SSM3K315T(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6A I(D),TO-236AA |
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SSM3K316T | TOSHIBA |
获取价格 |
Fiwld Effect Transistor Silicon N Channel MOS Type |
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SSM3K316T(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,4A I(D),SOT-346VAR |
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SSM3K318R | TOSHIBA |
获取价格 |
Small-Signal MOSFET (Single) |
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SSM3K318RLF(T | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor |
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SSM3K318T | TOSHIBA |
获取价格 |
Field-Effect Transistor Silicon N-Channel MOS |
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SSM3K318T(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),SOT-346VAR |
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SSM3K320T | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors |
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SSM3K324R | TOSHIBA |
获取价格 |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal |
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