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SSM3K316T

更新时间： 2024-02-29 07:52:16
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管
页数 文件大小 规格书
6页 180K
描述
Fiwld Effect Transistor Silicon N Channel MOS Type

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中文翻译

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SSM3K316T 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.36
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：4 A最大漏源导通电阻：0.053 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SSM3K316T 数据手册

 浏览型号SSM3K316T的Datasheet PDF文件第2页浏览型号SSM3K316T的Datasheet PDF文件第3页浏览型号SSM3K316T的Datasheet PDF文件第4页浏览型号SSM3K316T的Datasheet PDF文件第5页浏览型号SSM3K316T的Datasheet PDF文件第6页 
SSM3K316T  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K316T  
Power Management Switch Applications  
High-Speed Switching Applications  
Unit: mm  
•
•
1.8-V drive  
Low ON-resistance: R = 131 mΩ (max) (@V  
= 1.8 V)  
= 2.5 V)  
= 4.5 V)  
= 10 V)  
on  
GS  
R
on  
R
on  
R
on  
=
=
=
87 mΩ (max) (@V  
65 mΩ (max) (@V  
53 mΩ (max) (@V  
GS  
GS  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain–source voltage  
Symbol  
Rating  
30  
Unit  
V
V
DSS  
V
GSS  
Gate–source voltage  
± 12  
V
DC  
I
I
(Note 1)  
(Note 1)  
(Note 2)  
t = 10s  
4.0  
D
Drain current  
A
Pulse  
8.0  
DP  
P
700  
D
Drain power dissipation  
Channel temperature  
mW  
1250  
150  
T
°C  
°C  
ch  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-3S1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: The Junction temperature should not exceed 150°C during use.  
Weight: 10 mg (typ.)  
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
30  
18  
⎯
⎯
0.4  
3.8  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.  
⎯
Max  
⎯
Unit  
V
V
V
I
I
= 1 mA, V  
= 1 mA, V  
= 0 V  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain–source breakdown voltage  
= –12 V  
⎯
⎯
V
Drain cutoff current  
I
V
V
V
V
= 30 V, V  
= 0 V  
⎯
1
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ± 12 V, V  
= 0 V  
⎯
±1  
1.0  
⎯
DS  
V
= 3 V, I = 1 mA  
⎯
th  
D
⏐Y ⏐  
= 3 V, I = 2 A  
(Note3)  
(Note3)  
(Note3)  
(Note3)  
(Note3)  
7.7  
42  
S
fs  
D
I
I
I
I
= 3.0 A, V  
= 2.0 A, V  
= 1.0 A, V  
= 0.5 A, V  
= 10V  
53  
65  
87  
131  
⎯
D
D
D
D
GS  
GS  
GS  
GS  
= 4.5 V  
= 2.5 V  
= 1.8 V  
51  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
64  
81  
Input capacitance  
C
C
270  
56  
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
nC  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
⎯
DS  
oss  
C
47  
⎯
rss  
Q
g
4.3  
2.8  
1.5  
20  
⎯
V
V
= 15 V, I = 3.0 A  
DS  
DS  
GS  
Gate-Source Charge  
Gate-Drain Charge  
Q
⎯
gs  
gd  
= 4 V  
Q
⎯
Turn-on time  
Switching time  
t
t
V
V
= 10 V, I = 2 A,  
⎯
on  
off  
DD  
GS  
D
ns  
V
= 0 to 2.5 V, R = 4.7 Ω  
Turn-off time  
31  
⎯
G
Drain–source forward voltage  
Note3: Pulse test  
V
I
= − 4.0 A, V = 0 V  
GS  
(Note3)  
– 0.9  
– 1.2  
DSF  
D
1
2008-10-20  
123456

中文翻译

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