5秒后页面跳转
SSM3K16FU(TE85LF) PDF预览

SSM3K16FU(TE85LF)

更新时间: 2024-10-01 14:44:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 151K
描述
Small Signal Field-Effect Transistor

SSM3K16FU(TE85LF) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.62
Base Number Matches:1

SSM3K16FU(TE85LF) 数据手册

 浏览型号SSM3K16FU(TE85LF)的Datasheet PDF文件第2页浏览型号SSM3K16FU(TE85LF)的Datasheet PDF文件第3页浏览型号SSM3K16FU(TE85LF)的Datasheet PDF文件第4页浏览型号SSM3K16FU(TE85LF)的Datasheet PDF文件第5页 
SSM3K16FU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K16FU  
High Speed Switching Applications  
Analog Switching Applications  
Unit: mm  
Suitable for high-density mounting due to compact package  
Low on resistance: R = 3.0 (max) (@V  
= 4 V)  
on  
GS  
GS  
: R = 4.0 (max) (@V  
= 2.5 V)  
on  
: R = 15 (max) (@V  
= 1.5 V)  
on  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
20  
±10  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
200  
DP  
P (Note 1)  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
150  
mW  
°C  
D
T
150  
ch  
Storage temperature range  
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
SC-70  
2-2E1E  
TOSHIBA  
Note 1: Mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3)  
0.6 mm  
1.0 mm  
Marking  
Equivalent Circuit  
3
3
D S  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
Start of commercial production  
2001-03  
1
2014-03-01  

与SSM3K16FU(TE85LF)相关器件

型号 品牌 获取价格 描述 数据表
SSM3K16FU,LF(T TOSHIBA

获取价格

Small Signal Field-Effect Transistor
SSM3K16FU_07 TOSHIBA

获取价格

Silicon N Channel MOS Type High Speed Switching Applications
SSM3K16FV TOSHIBA

获取价格

Silicon N Channel MOS Type High Speed Switching Applications
SSM3K16FV(L3KYOC,Z TOSHIBA

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
SSM3K16FV(L3SMMD,Z TOSHIBA

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
SSM3K16FV(NHF,Z) TOSHIBA

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
SSM3K16FVL3F(T TOSHIBA

获取价格

Small Signal Field-Effect Transistor
SSM3K16FVTL3T TOSHIBA

获取价格

High Speed Switching Applications Analog Switch Applications
SSM3K16TE TOSHIBA

获取价格

High Speed Switching Applications Analog Switch Applications
SSM3K16TE(TE85,L,F) TOSHIBA

获取价格

Small Signal Field-Effect Transistor