Datasheet > SSM3K16TE(TE85,L,F)

SSM3K16TE(TE85,L,F)

更新时间： 2024-02-09 02:26:54

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	171K
描述
Small Signal Field-Effect Transistor

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技术参数
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SSM3K16TE(TE85,L,F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.62
Base Number Matches：	1

SSM3K16TE(TE85,L,F) 数据手册

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SSM3K16TE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K16TE

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

Suitable for high-density mounting due to compact package

Low on resistance: R = 3.0 Ω (max) (@V

= 4 V)

: R = 4.0 Ω (max) (@V

= 2.5 V)

= 1.5 V)

: R = 15 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±10

Gate-Source voltage

GSS

100

Drain current

Pulse

200

Drain power dissipation (Ta = 25°C)

Channel temperature

100

°C

stg

JEDEC

JEITA

―

150

Storage temperature range

−55~150

°C

TOSHIBA

2-1B1B

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 2.2 mg (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit

D S

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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